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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon 3 COLLECTOR 1 BASE BCW60ALT1 BCW60BLT1 BCW60DLT1 3 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V V V CEO CBO EBO Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ , Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 2.0mAdc, IE = 0 ) Emitter-Base Breakdown Voltage (I E= 1.0 Adc, I C = 0) Collector Cutoff Current (VCE = 32 Vdc, ) (VCE = 32 Vdc, TA = 150C) Emitter Cutoff Current (I EB= 4.0 Vdc, I C = 0) 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. I EBO -- 20 nAdc V (BR)EBO I CES -- -- 20 20 nAdc Adc 5.0 -- Vdc V (BR)CEO 32 -- Vdc M9-1/6 LESHAN RADIO COMPANY, LTD. BCW60ALT1 BCW60BLT1 BCW60DLT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE BCW60A BCW60B BCW60D hFE BCW60A BCW60B BCW60D ( IC= 50 mAdc, VCE = 1.0 Vdc ) BCW60A BCW60B BCW60D AC Current Gain ( VCE = 5.0Vdc, IC= 2.0 mAdc, f= 1.0 kHz ) hFE 125 175 350 V CE(sat) -- -- V BE(sat) Min Max Unit -- ON CHARACTERISTICS DC Current Gain ( IC= 10 Adc, VCE = 5.0 Vdc ) 20 30 100 120 175 380 hFE 60 70 100 -- -- -- -- 250 350 700 Vdc 0.55 0.35 Vdc 0.7 0.6 V BE(on) 0.6 0.75 1.05 0.85 Vdc -- -- -- -- 220 310 630 -- ( IC= 2.0 mAdc, VCE = 5.0 Vdc ) BCW60A BCW60B BCW60D Collector-Emitter Saturation Voltage ( IC = 50 mAdc, IB = 1.25 mAdc ) ( IC = 10 mAdc, IB = 0.25 mAdc ) Base-Emitter Saturation Voltage ( IC = 50 mAdc, IB = 1.25 mAdc ) ( IC = 50 mAdc, IB = 0.25 mAdc ) Base-Emitter On Voltage ( IC = 2.0 mAdc, VCE = 5.0 Vdc ) Current-Gain -- Bandwidth Product (I C = 10 mAdc, V CE = 5.0 Vdc, f = 100 MHz) Output Capacitance (V CE = 10 Vdc, I C = 0, f = 1.0 MHz) Noise Figure (V CE = 5.0 Vdc, I C = 0.2 mAdc, R S = 2.0 k, f = 1.0 kHz, BW = 200 Hz) SMSMALL-SIGNAL CHARACTERISTICS fT C obo NF 125 -- -- -- 4.5 6.0 MHz pF dB SWITCHING CHARACTERISTICS Turn-On Time (I C = 10 mAdc, I B1 = 1.0 mAdc) Turn-Off Time (I B2 = 1.0 mAdc, V BB = 3.6 Vdc, R 1 = R 2 = 5.0 k, R L = 990 ) t on t off -- -- 150 800 ns ns EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V t 1 +3.0 V 300 ns DUTY CYCLE = 2% - 0.5 V <1.0 ns +10.9 V 275 10 k 10 < t 1 < 500 s DUTY CYCLE = 2% 0 - 9.1 V +10.9 V 275 10 k C S < 4.0 pF* 1N916 <1.0 ns C S < 4.0 pF* *Total shunt capacitance of test jig and connectors Figure 1. Turn-On Time Figure 2. Turn-Off Time M9-2/6 LESHAN RADIO COMPANY, LTD. BCW60ALT1 BCW60BLT1 BCW60DLT1 TYPICAL NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25C) 20 100 IC= 1.0mA e n , NOISE VOLTAGE (nV) BANDWIDTH = 1.0 Hz ~ RS~ 0 50 20 IC=1.0mA 300A BANDWIDTH = 1.0 Hz ~ RS ~ 30A 10 I n , NOISE CURRENT (pA) 10 5.0 2.0 1.0 0.5 0.2 0.1 10 20 50 100 200 500 100A 7.0 5.0 100A 3.0 10 A 30A 30A 10A 1.0k 2.0k 5.0k 10 k 2.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10 k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 3. Noise Voltage Figure 4. Noise Current NOISE FIGURE CONTOURS (V CE = 5.0 Vdc, T A = 25C) 500k 200k BANDWIDTH = 1.0 Hz 1.0M 500k BANDWIDTH = 1.0 Hz 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 50 10 20 30 50 70 100 200 300 500 700 1.0K R S , SOURCE RESISTANCE ( ) R S , SOURCE RESISTANCE ( ) 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 10 20 30 50 70 100 200 300 2.0 dB 3.0 dB 4.0dB 6.0 dB 10 dB 1.0 dB 2.0 dB 3.0dB 5.0 dB 8.0 dB 500 700 1.0K I C , COLLECTOR CURRENT (A) I C , COLLECTOR CURRENT (A) Figure 5. Narrow Band, 100 Hz 500k Figure 6. Narrow Band, 1.0 kHz R S , SOURCE RESISTANCE ( ) 200k 100k 50k 20k 10k 5.0k 2.0k 1.0k 500 200 100 50 10 20 30 50 70 100 200 10 Hz to 15.7Hz Noise Figure is Defined as: NF = 20 log 10 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 300 500 700 1.0K ( ---------------) 4KTR S e n 2 +4KTRS +I n2 R S2 1/ 2 e n = Noise Voltage of the Transistor referred to the input. (Figure 3) I n = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10 -23 j/K) T = Temperature of the Source Resistance (K) R s = Source Resistance ( ) I C , COLLECTOR CURRENT (A) Figure 7. Wideband 8 M9-3/6 LESHAN RADIO COMPANY, LTD. BCW60ALT1 BCW60BLT1 BCW60DLT1 TYPICAL NOISE CHARACTERISTICS 400 T J = 125C hFE , DC CURRENT GAIN 200 25C 100 80 60 - 55C V CE= 1.0 V V CE= 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 40 0.0040.006 0.01 I C , COLLECTOR CURRENT (mA) V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain I C , COLLECTOR CURRENT (mA) 1.0 100 T J = 25C 0.8 80 T A = 25C PULSE WIDTH =300 s DUTY CYCLE<2.0% I B= 500 A 400 A 300 A 0.6 I C= 1.0 mA 10 mA 50 mA 100 mA 60 200 A 40 0.4 100 A 20 0.2 0 0.002 0.0050.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 0 5.0 10 15 20 25 30 35 40 I B , BASE CURRENT (mA) V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 9. Collector Saturation Region 1.4 Figure 10. Collector Characteristics V , TEMPERATURE COEFFICIENTS (mV/C) 1.6 T J = 25C 1.2 *APPLIES for I C / I B< h FE / 2 0.8 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 VC for V CE(sat) 25C to 125C -55C to 25C V BE(sat) @ I C /I B = 10 V BE(on)@ V CE= 1.0 V -0.8 25C to 125C -1.6 V CE(sat) @ I C /I B = 10 VB for V BE -55C to 25C -2.4 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 11. "On" Voltages Figure 12. Temperature Coefficients M9-4/6 LESHAN RADIO COMPANY, LTD. BCW60ALT1 BCW60BLT1 BCW60DLT1 TYPICAL DYNAMIC CHARACTERISTICS 300 200 100 70 1000 700 500 300 200 50 30 20 10 7.0 5.0 3.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 V CC= 3.0 V IC /I B= 10 T J= 25C ts t, TIME (ns) tf t, TIME (ns) 100 70 50 30 20 10 tf VCC= 3.0 V IC /I B= 10 IB1=IB2 T J= 25C 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 td @ V BE(off)= 0.5 Vdc I C , COLLECTOR CURRENT (mA) f T, CURRENT- GAIN -- BANDWIDTH PRODUCT (MHz) I C , COLLECTOR CURRENT (mA) Figure 13. Turn-On Time 500 10.0 Figure 14. Turn-Off Time 300 T J = 25C f=100MHz C, CAPACITANCE (pF) 7.0 T J= 25C f = 1.0MHz C ib C ob V CE=20 V 200 5.0 5.0 V 3.0 100 2.0 70 50 0.5 1.0 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I C , COLLECTOR CURRENT (mA) V R , REVERSE VOLTAGE (VOLTS) Figure 15. Current-Gain -- Bandwidth Product hoe , OUTPUT ADMITTANCE ( mhos ) 20 200 100 70 50 Figure 16. Capacitance h ie , INPUT IMPEDANCE ( k ) 10 7.0 5.0 3.0 2.0 h fe ~ ~ 200 @ I C= 1.0 mA VCE= 10 Vdc f = 1.0 kHz T A = 25C VCE= 10 Vdc f = 1.0 kHz T A= 25C h fe ~ ~ 30 20 200 @ I C= 1.0 mA 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. Input Impedance Figure 18. Output Admittance M9-5/6 LESHAN RADIO COMPANY, LTD. BCW60ALT1 BCW60BLT1 BCW60DLT1 r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 FIGURE 19A 0.05 P(pk) 0.02 0.01 t SINGLE PULSE 1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 DUTY CYCLE, D = t 1 / t 2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 (SEE AN-569) t 2 Z JA(t) = r(t) * RJA T J(pk) - T A = P (pk) Z JA(t) 1.0k 2.0k 5.0k 10k 20k 50k 100k 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 t, TIME (ms) Figure 19. Thermal Response 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA V CC = 30 Vdc 103 102 I CEO 101 100 I CBO AND I CEX @ V BE(off) = 3.0 Vdc 10-1 10-2 -4 -2 0 +20 +40 +60 +80 +100 +120 +140 +160 T J , JUNCTION TEMPERATURE (C) Figure 19A. 400 A train of periodical power pulses can be represented by the model as shown in Figure 19A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find Z JA(t) , multiply the value obtained from Figure 19 by the steady state value R JA . Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P (pk) x R JA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. I C , COLLECTOR CURRENT (nA) I C , COLLECTOR CURRENT (mA) 1.0 ms 200 100s 10s 1.0 s dc 100 60 40 T C = 25C T A = 25C dc T J = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 4.0 6.0 8.0 10 20 10 6.0 4.0 The safe operating area curves indicate I C -V CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon T J(pk) = 150C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) <150C. T J(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 40 20 V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 20. M9-6/6 |
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