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APT11GF120KR 1200V 22A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. TO-220 * Low Forward Voltage Drop * Low Tail Current * Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VEC VGE I C1 I C2 I CM1 I CM2 EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage * High Freq. Switching to 20KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated G C E C G E All Ratings: TC = 25C unless otherwise specified. APT11GF120KR UNIT 1200 1200 15 20 22 11 44 22 10 125 -55 to 150 300 C mJ Watts Amps Volts Collector-Gate Voltage (RGE = 20KW) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current Pulsed Collector Current 1 1 @ TC = 25C @ TC = 110C 2 Single Pulse Avalanche Energy Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES RBVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.4mA) Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, I C = 50mA) Gate Threshold Voltage (VCE = VGE, I C = 350A, Tj = 25C) MIN TYP MAX UNIT 1200 -15 4.5 5.5 2.5 3.1 6.5 3.0 3.7 0.4 052-6213 Rev B 12-2000 Volts Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) I CES I GES 2.0 100 mA nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT11GF120KR Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES I C = I C2 Resistive Switching (25C) VGE = 15V VCC = 0.8VCES I C = I C2 RG = 10W MIN TYP MAX UNIT 600 70 38 55 35 6 10 45 55 110 13 800 105 55 pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance nC ns Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +150C 12 125 90 .45 1.00 1.45 ns mJ Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +25C VCE = 20V, I C = I C2 13 12 110 90 1.0 4.7 mJ S ns THERMAL CHARACTERISTICS Symbol RQJC RQJA Torque 1 2 Characteristic Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw MIN TYP MAX UNIT C/W 1.00 80 10 lb*in Repetitive Rating: Pulse width limited by maximum junction temperature. IC = 15A, RGE = 25W, L = 300H, Tj = 25C See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6213 Rev B 12-2000 3 |
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