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| APA2N70K Advanced Power Electronics Corp. Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirement D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S D 675V 10 0.2A ID SOT-223 G Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G S D Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 5V Continuous Drain Current, VGS @ 5V Pulsed Drain Current 1 Rating 675 30 0.2 0.13 0.5 1.13 0.01 2 Units V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range 0.5 1 0.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Max. Value 110 Unit /W Data & specifications subject to change without notice 201130020 APA2N70K Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 675 2 - Typ. 0.52 0.4 5.5 1.9 0.5 7.7 3.6 24 44 286 25 6 Max. Units 8 10 4 10 100 100 V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=0.2A VGS=5V, ID=0.2A VDS=VGS, ID=250uA VDS=10V, ID=0.2A VDS=675V, VGS=0V VDS=540V, VGS=0V VGS= 30V ID=0.2A VDS=540V VGS=10V VDS=300V ID=0.2A RG=3.3,VGS=10V RD=1500 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 Source-Drain Diode Symbol IS ISM VSD Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25 , IAS=1A. 3.Pulse width <300us , duty cycle <2%. Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V Tj=25, IS=0.2A, VGS=0V Min. - Typ. - Max. Units 0.2 0.5 1.2 A A V Pulsed Source Current ( Body Diode ) 1 Forward On Voltage 3 APA2N70K 1 0.8 T C =25 o C 10V 5.5V 5.0V 0.6 T C =150 o C 10V 5.0V 4.5V 0.75 ID , Drain Current (A) ID , Drain Current (A) 0.5 0.4 4.5V 0.25 V GS =4.0V 0.2 V GS =4.0V 0 0 3 6 9 12 0 0 6 12 18 24 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.8 2.4 I D =0.2A V GS =10V 1.1 2 Normalized BVDSS (V) Normalized R DS(ON) 1.6 1 1.2 0.8 0.9 0.4 0.8 -50 0 50 100 150 0 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( C ) o Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature APA2N70K 0.24 1.6 0.18 1.2 ID , Drain Current (A) 0.12 PD (W) 25 50 75 100 125 150 0.8 0.06 0.4 0 0 0 50 100 150 T c , Case Temperature ( o C ) Tc, Case Temperature ( o C ) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 1 1 1ms 0.1 Normalized Thermal Response (R thja) Duty Factor=0.5 0.2 ID (A) 0.1 0.1 0.05 10ms 0.01 PDM t 0.02 T 0.01 Single Pulse 100ms T C =25 o C Single Pulse 0.001 1 10 100 1000 10000 Duty Factor = t/T Peak Tj = P DM x Rthja+ Ta 1s 10s 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance APA2N70K 16 1000 f=1.0MHz I D =0.2A V DS =540V VGS , Gate to Source Voltage (V) 12 100 Ciss 8 C (pF) Coss 10 4 Crss 0 0 2 4 6 8 1 1 10 19 28 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 1 4 3.5 0.1 VGS(th) (V) 1.2 T j = 150 o C IS (A) T j = 25 o C 3 0.01 2.5 0.001 0 0.3 0.6 0.9 2 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( o C ) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature APA2N70K VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.44 x RATED RG G 10% + 10 V S VGS VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 10V D G S + 0.8 x RATED VDS QGS QGD VGS 1~ 3 mA IG ID Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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