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| AOU438 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOU438 is Pb-free (meets ROHS & Sony 259 specifications). AOU438L is a Green Product ordering option. AOU438 and AOU438L are electrically identical . Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4.5m (VGS = 10V) RDS(ON) < 6.5m (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B C Maximum 30 20 85 63 200 30 112 100 50 -55 to 175 Units V V A A mJ W C TC=25C G TC=100C B ID IDM IAR EAR PD TJ, TSTG TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient C Maximum Junction-to-Case A Steady-State Steady-State Symbol RJA RJC Typ 0.8 Max 100 1.5 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU438 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1 85 3.5 5.4 5.4 106 0.72 1 85 3200 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 590 414 0.54 63 VGS=4.5V, VDS=15V, ID=20A 33 8.6 17.6 12 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s 15.5 40 14 34 30 41 0.7 76 40 3840 4.5 6.5 6.5 1.8 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of R JA is measured with the device in a still air environment with TA =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev1: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU438 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 4.0V 40 ID (A) ID(A) 30 3.5V 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics VGS=3V 0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 60 10V 50 VDS=5V 40 30 20 10 125C 25C 8 Normalized On-Resistance 7 RDS(ON) (m) 6 5 4 3 2 0 10 20 30 40 50 60 VGS=10V VGS=4.5V 1.6 ID=20A 1.4 VGS=10V 1.2 VGS=4.5V 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 8 1.0E+02 1.0E+01 125C 6 RDS(ON) (m) 125C IS (A) 1.0E+00 1.0E-01 25C 1.0E-02 1.0E-03 1.0E-04 4 ID=20A 25C 2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOU438 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 10 20 30 40 50 60 70 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=20A Capacitance (pF) 5000 4000 Ciss 3000 2000 Coss 1000 Crss 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1000 RDS(ON) limited 1ms Power (W) 100s 10 10ms DC 1 TJ(Max)=150C TA=25C 1000 800 600 400 200 0 1E-05 1E-04 0.001 TJ(Max)=150C TA=25C 100 ID (Amps) 10s 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) 10 ZJC Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZJC.RJC RJC=1.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse 0.1 Single Pulse 0.01 0.00001 PD Ton T 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU438 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 ID(A), Peak Avalanche Current TA=25C Power Dissipation (W) 0.001 0.01 100 80 60 40 20 0 0.00001 100 80 60 40 20 0 0.0001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) 120 tA = L ID BV - VDD Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 100 80 Current rating ID(A) 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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