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| AOU403 P-Channel Enhancement Mode Field Effect Transistor General Description The AOU403 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU403 is Pb-free (meets ROHS & Sony 259 specifications). AOU403L is a Green Product ordering option. AOU403 and AOU403L are electrically identical. TO-251 D Features VDS (V) = -60V ID = -12A (VGS = -10V) RDS(ON) < 115m (VGS = -10V) RDS(ON) < 150m (VGS = -4.5V) Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum -60 20 -12 -10 -30 -12 23 50 25 -55 to 175 Units V V A A mJ W C TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RJA RJC Typ 105 2.5 Max 125 3 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU403 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-48V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-12A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-8A Forward Transconductance VDS=-5V, ID=-12A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.5 -30 91 150 114 12.8 -0.76 -1 -12 987 VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 114 46 7 15.8 VGS=-10V, VDS=-30V, ID=-12A 7.4 3 3.5 9 VGS=-10V, VDS=-30V, RL=2.5, RGEN=3 IF=-12A, dI/dt=100A/s 10 25 11 27.5 30 35 10 20 9 1185 150 115 -2.1 Min -60 -0.003 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/s A: The value of R qJA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev 2: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 20 -ID (A) -ID(A) -4.5V 15 VGS=-4V 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 220 200 180 RDS(ON) (m) 160 140 120 100 80 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=-10V VGS=-4.5V Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-4.5V ID=-8A VGS=-10V ID=-12A -3.5V -3V 0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics 2 6 125C 4 25C -7V -6V -5V 8 10 VDS=-5V 300 ID=-12A 250 125C RDS(ON) (m) 200 -IS (A) 1.0E+01 1.0E+00 1.0E-01 125C 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 25C 150 25C 100 50 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOU403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-30V ID=-12A Capacitance (pF) 1200 Ciss 8 -VGS (Volts) 1000 800 600 400 Coss 200 0 0 8 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 4 16 0 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss 6 4 2 0 100.0 TJ(Max)=175C, TA=25C 10s -ID (Amps) 100s Power (W) 10.0 RDS(ON) limited 200 160 120 80 40 0 0.0001 TJ(Max)=175C TA=25C 1ms 10ms 1.0 DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance 10 100 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 14 -ID(A), Peak Avalanche Current Power Dissipation (W) 60 12 tA = L ID BV - V DD 50 40 30 20 10 0 10 8 TA=25C 6 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability T CASE (C) Figure 13: Power De-rating (Note B) 14 12 Current rating -ID(A) 10 8 6 4 2 0 0 25 50 75 100 125 150 175 T CASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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