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 DATA SHEET
SILICON SWITCHING DIODE
1SS304
HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON CATHODE
FEATURES
* * * * Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.
PACKAGE DIMENSIONS (Unit: mm)
2.10.1 1.250.1
0.65 0.65
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25C) Peak Reverse Voltage DC Reverse Voltage Surge Current (1 s) Surge Current (1 s) Peak Forward Current Peak Forward Current Average Rectified Current Average Rectified Current Maximum Temperatures Junction Temperature Storage Temperature Range Thermal Resistance Junction to Ambient Junction to Ambient Note Both diodes loaded simultaneously.
Note Note Note Note
VR IFSM IFSM IFM IFM IO IO
50 6.0 4.0 450 300 150 100
V
0.3
A
0.90.1
Marking
mA mA mA mA
CONNECTION DIAGRAM (Top View)
Tj Tstg 150 -55 to + 150 C C
2 3 1. Anode 2. Anode 3. Cathode Marking : A6
Rth(j-a) Rth(j-a)
1.0 0.85
C/mW C/mW
1
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Forward Voltage SYMBOL VF1 VF2 VF3 Reverse Current Capacitance Reverse Recovery Time IR Ct trr TEST CONDITIONS IF = 10 mA IF = 50 mA IF = 100 mA VR = 50 V VR = 0 V, f = 1.0 MHz See Test Circuit. 1.1 MIN. TYP. 0.67 0.75 0.85 MAX. 1.0 1.1 1.2 0.1 4.0 3.0 UNIT V V V
0 to 0.1
A
pF ns
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D16309EJ2V0DS00 (2nd edition) (Previous No. DC-2101) Date Published July 2002 NS CP(K) Printed in Japan
0.15+0.1 -0.05
A
0.3+0.1 -0
VRM
75
V
2.00.2
0.3+0.1 -0
2 3
1
(c)
1987
1SS304
TYPICAL CHARACTERISTICS (TA = 25C)
FORWARD CURRENT vs. FORWARD VOLTAGE 100 50 20
IF - Forward Current - mA
REVERSE CURRENT vs. REVERSE VOLTAGE 100 50 20
10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2
IR - Reverse Current - A
10 5 2 1 0.5 0.2 0 10 20 30 40 VR - Reverse Voltage - V 50
VF - Forward Voltage - V
TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 20 10
trr - Reverse Recovery Time - ns
Ct - Terminal Capacitance - pF
REVERSE RECOVERY TIME vs. FORWARD CURRENT 20
16
5
2 1 0.5
12
8
4
0.2 0.1 0.5
1
2
5 10 20 VR - Reverse Voltage - V
50
100
0
20
40 60 80 IF - Forward Current - mA
100
2
Data Sheet D16309EJ2V0DS
1SS304
REVERSE RECOVERY TIME (trr) TEST CIRCUIT
Trigger Pulse Generator (50 )
DC Source
Input Voltage Waveform to Diode 0 VF VR Ir 0 IF
Output Current Waveform in Diode
0.02 F
D.U.T.
Sampling Oscilloscope (50 )
0.1* Ir
+ 3 k - IF = 10 mA, VR = 6.0 V, RL = 100 irr = 0.1* Ir
trr
Data Sheet D16309EJ2V0DS
3
1SS304
* The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4


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Part # Manufacturer Description Price BuyNow  Qty.
SS3040HE_R1_00001
241-SS3040HER100001
PanJit Semiconductor Schottky Diodes & Rectifiers 40V,Schottky,SOD-123HE,3A 1: USD0.38
10: USD0.272
100: USD0.122
1000: USD0.095
3000: USD0.082
9000: USD0.073
24000: USD0.072
45000: USD0.061
99000: USD0.059
BuyNow
146
SS3040HE-AU_R1_000A1
241-SS3040HEAUR1000A
PanJit Semiconductor Schottky Diodes & Rectifiers 40V,Schottky,SOD-123HE,3A 1: USD0.39
10: USD0.305
100: USD0.183
500: USD0.17
1000: USD0.116
3000: USD0.101
9000: USD0.091
24000: USD0.09
45000: USD0.084
RFQ
0
SS3040HE_R1_10001
241-SS3040HER110001
PanJit Semiconductor Schottky Diodes & Rectifiers 40V Schottky 3A 3000: USD0.084
9000: USD0.073
24000: USD0.072
45000: USD0.061
99000: USD0.059
RFQ
0
SS3040FL-F_R1_10001
241-SS3040FLFR110001
PanJit Semiconductor Schottky Diodes & Rectifiers 40V Schottky 2.4A 3000: USD0.104
9000: USD0.092
24000: USD0.091
45000: USD0.077
99000: USD0.074
RFQ
0
SS3040HE_R2_10001
241-SS3040HER210001
PanJit Semiconductor Schottky Diodes & Rectifiers 40V Schottky 3A 10000: USD0.073
20000: USD0.072
50000: USD0.061
100000: USD0.059
RFQ
0

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