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| QST6 Transistors Low frequency amplifier QST6 !Application Low frequency amplifier Driver !External dimensions (Units : mm) 2.8 1.6 (1) 1) A collector current is large. 2) VCE(sat) < - 180mV = At I C = - 1A / IB = - 50mA 0.16 (3) (2) !Features (4) (5) (6) 0.4 Each lead has same dimensions Abbreviated symbol : T06 !Absolute maximum ratings (Ta=25C) Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg 1 Single pulse, PW=1ms 2 Each Termminal Mounted on a Recommended !Equivalent circuit Limits -15 -12 -6 -2 -4 500 150 -55~+150 Unit V V V A A1 mW2 C C (6) (5) (4) Parameter Collector-base voltage (1) (2) (3) !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -15 -12 -6 - - - 270 - - Typ. - - - - - -100 - 360 15 Max. - - - -100 -100 -180 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=-10A IC=-1mA IE=-10A VCB=-15V VEB=-6V IC=-1A, IB=-50mA VCE=-2V, IC=-200mA VCE=-2V, IE=200mA, f=100MHz VCB=-10V, IE=0A, f=1MHz 0.85 2.9 1/2 QST6 Transistors !Packaging specifications Package Type Code Basic ordering unit (pieces) QST6 Taping TR 3000 !Electrical characteristic curves BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 Ta=100C 10 -1 Ta=25C PULSED DC CURRENT GAIN : hFE VBE(sat) 1 Ta=-40C Ta=25C Ta=100C 25C -40C 100 -0.1 IC/IB=50 20 10 -0.01 VCE(sat) 0.1 Ta=100C Ta=25C Ta=-40C 0.01 IC/IB=20 PULSED 0.001 0.001 0.01 0.1 1 10 VCE=-2V PULSED 10 -0.001 -0.01 -0.1 -1 -10 -0.001 -0.001 -0.01 -0.1 -1 -10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig1. DC current gain vs.collector current Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs.collector current 1000 Ta=25C VCE=-2V PULSED Fig.3 Collector-emitter saturation voltage vs.collector current 1000 -10 TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) -1 Ta=100C 25C -40C -0.1 SWITCHING TIME : (ns) 100 tstg 100 tdon tf 10 Ta=25C tr -0.01 VCE=-2V Ta=25C PULSED -0.001 0 -0.5 -1 PULSED IC=20 IB1=-20 IB=2 10 0.001 0.01 0.1 1 10 1 -0.001 -0.01 -0.1 -1 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation characteristics Fig.5 Gain bandwidth product vs.emitter current Fig.6 Switching time EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 Ta=25C IE=0A f=1MHz 100 Cib 10 Cob 1 -0.1 -1 -10 -100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig7. Collector output capacitance vs.collector-base voltage Emitter input capacitance vs.emitter-base voltage 2/2 |
Price & Availability of QST6
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