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 QST4 Transistors
Low frequency amplifier
QST4
Application Low frequency amplifier Driver External dimensions (Unit : mm)
2.8 1.6
(1) (4) (5) (6)
0.4
Features 1) A collector current is large. 2) VCE(sat) : max. -250mV At IC=-1.5A / IB=-30mA
0.16
(3) (2)
Each lead has same dimensions
ROHM : TSMT6 QST4
Abbreviated symbol : T04
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits -15 -12 -6 -3 -6 500 1.25 150 -55 to +150 Unit V V V A A1 mW2 W 3 C C
Equivalent circuit
(6) (5) (4)
Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature
(1)
(2)
(3)
1 Single pulse, PW=1ms 2 Each Termminal Mounted on a Recommended 3 Mounted on a 25mmx25mmx t 0.8mm Ceramic substrate
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance
Pulsed
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. -15 -12 -6 - - - 270 - -
Typ. - - - - - -120 - 280 30
Max. - - - -100 -100 -250 680 - -
Unit V V V nA nA mV - MHz pF
Conditions IC=-10A IC=-1mA IE=-10A VCB=-15V VEB=-6V IC=-1.5A, IB=-30mA VCE=-2V, IC=-500mA VCE=-2V, IE=500mA, f=100MHz VCB=-10V, IE=0A, f=1MHz
0.85
2.9
Rev.C
1/2
QST4 Transistors
Packaging specifications
Package Type Code Basic ordering unit (pieces) QST4 Taping TR 3000
Electrical characteristic curves
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
125C 25C
- 40C
125C
0.1
25C
BASE SATURATION VOLTAGE : VBE(sat) (V)
1000
1
10
DC CURRENT GAIN : hFE
100
1
25C - 40C
- 40C
0.01
125C
VCE=-2V Pulsed 10 0.001 0.01
0.1
1
10
IC/IB=20/1 Pulsed 0.001 0.001 0.01
IC/IB=20/1
0.1 Pulsed 0.001 0.01 0.1 1 10
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig1. DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage vs. collector current
Fig.3 Base-emitter saturation voltage vs.collector current
1000
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
1000
TRANSITION FREQUENCY : fr (MHz)
COLLECTOR CURRENT : IC (A)
Ta=25C VCE=2V f=100MHz
Cib
IC=0A f=1MHz Ta=25C
1
Cob
100
25C
0.1
100
0.01
125C
- 40C
IC/IB=20/1
0.001 Pulsed 0.1 1
10
10 0.01
10 0.001
0.01
0.1
1
10
100
0.1
1
10
BASE TO EMITTER CURRENT : VBE (V)
EMITTER CURRENT : IE (A)
EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.4 Grounded emitter propagation charactereistics
Fig.5 Gain bandwidth product vs. emitter current
Fig 6. Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base volatage
Rev.C
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


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