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Datasheet File OCR Text: |
CBSL1SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL1SL is Designed for Class A, Cellular Base Staion Applications up to 960 MHz. PACKAGE STYLE .280 4L PILL A FEATURES: * Class A Operation * PG = 10 dB at 1.0 W/960 MHz * OmnigoldTM Metalization System E OB C B MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC O O E OC 0.250 A 40 V 28 V DIM D E F MINIMUM inches / mm MAXIMUM inches / mm 3.5 V 7.0 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 25 C/W O O O O A B C D E F .220 / 5.59 .230 / 5.84 1.055 / 26.80 .275 / 6.99 .004 / 0.10 .050 / 1.27 .118 / 3.00 .285 / 7.24 .006 / 0.15 .060 . 1.52 .130 / 3.30 ORDER CODE: ASI10578 O CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE COB PG TC = 25 C NONETEST CONDITIONS IC = 1.0 mA IC = 1.0 mA IE = 1.0 mA VCB = 24 V VCE = 5.0 V VCB = 24 V VCC = 24 V POUT = 1.0 W ICQ = 125 mA IC = 100 mA f = 1.0 MHz f = 960 MHz MINIMUM TYPICAL MAXIMUM 40 28 3.5 0.5 20 120 5.0 10 UNITS V V V mA --pF dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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