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| VN1206L Vishay Siliconix N-Channel 120-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) 120 rDS(on) Max (W) 6 @ VGS = 10 V VGS(th) (V) 0.8 to 2 ID (A) 0.23 FEATURES D D D D D Low On-Resistance: 3.8 W Low Threshold: 1.4 V Low Input Capacitance: 35 pF Fast Switching Speed: 10 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-226AA (TO-92) S 1 Device Marking Front View "S" VN 1206L xxyy "S" = Siliconix Logo xxyy = Date Code G 2 D 3 Top View VN1206L ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70227 S-04279--Rev. E, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg Limits 120 "30 0.23 0.15 2 0.8 0.32 156 -55 to 150 Unit V A W _C/W _C 11-1 VN1206L Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS(th) VGS = 0 V, ID = 100 mA VDS = VGS, ID = 250 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "15 V Gate-Body Leakage IGSS TJ = 125_C VDS = 0 V, VGS = "20 V VDS = 96 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS TJ = 125_C VDS = 120 V, VGS = 0 V TJ = 125_C On-State Drain Currentb VDS = 10 V, VGS = 4.5 V ID(on) VDS = 10 V, VGS = 10 V VGS = 2.5 V, ID = 0.1 A VGS = 3.5 V, ID = 0.1 A VGS = 10 V, ID = 0.3 A Drain-Source On-Resistanceb rDS(on) VGS = 4.5 V, ID = 0.2 A TJ = 125_C VGS = 10 V, ID = 0.5 A TJ = 125_C Forward Transconductanceb Common Source Output Conductanceb VDS = 10 V, ID = 0.2 A gfs gos VDS = 10 V, ID = 0.5 A VDS = 7.5 V, ID = 0.1 A 300 1 0.6 1.6 6 4.5 3.3 3.8 7.6 3.3 7 400 425 0.4 mS 6 14.8 W 10 A 10 500 mA m 0.8 120 145 1.4 1.5 2 "100 "500 nA V Symbol Test Conditions Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V f = 1 MHz 35 15 2 125 50 20 pF Switchingc tON Turn-On Time td(on) tr tOFF Turn-Off Time td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing.. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. VDD = 60 V, RL = 150 W ID ^ 0.4 A, VGEN = 10 V RG = 25 W 6 3 3 10 7 2.5 18 12 8 8 ns VNDQ12 www.vishay.com 11-2 Document Number: 70227 S-04279--Rev. E, 16-Jul-01 VN1206L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 1000 VGS = 10 V 6V 800 ID - Drain Current (mA) 4V ID - Drain Current (mA) 160 2.8 V 2.4 V 120 2.2 V 80 2.0 V 40 1.8 V 2V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V) 1.6 V 200 VGS = 3.0 V Output Characteristics for Low Gate Drive 2.6 V 600 400 3V 200 Transfer Characteristics 500 VDS = 10 V 400 ID - Drain Current (mA) TJ = -55_C 300 rDS(on) - On-Resistance ( ) 5.0 4.5 25_C 125_C 5.5 6.0 On-Resistance vs. Gate-to-Source Voltage 0.25 A 4.0 3.5 3.0 I D = 0.1 A 0.5 A 200 100 0 0 1 2 3 4 5 VGS - Gate-Source Voltage (V) 2.5 0 10 VGS - Gate-Source Voltage (V) 20 On-Resistance vs. Drain Current 5.0 VGS = 10 V rDS(on) - Drain-Source On-Resistance ( ) 4.5 rDS(on) - Drain-Source On-Resistance ( ) (Normalized) 2.25 Normalized On-Resistance vs. Junction Temperature VGS = 10 V 2.00 1.75 0.1 A 1.50 1.25 1.00 0.75 0.50 ID = 0.5 A 4.0 3.5 3.0 2.5 0 0.2 0.4 0.6 0.8 1.0 -50 -10 30 70 110 150 ID - Drain Current (A) TJ - Junction Temperature (_C) Document Number: 70227 S-04279--Rev. E, 16-Jul-01 www.vishay.com 11-3 VN1206L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region 10 VDS = 15 V 100 ID - Drain Current (mA) C - Capacitance (pF) 120 VGS = 0 V f = 1 MHz Capacitance 1 TJ = 150_C 80 60 25_C 0.1 40 C iss 20 -55_C 0.01 0 0.5 1 1.5 2 0 0 10 C rss C oss 20 30 40 50 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Gate Charge 12 I D = 0.5 A VGS - Gate-to-Source Voltage (V) 10 t - Switching Time (ns) 100 Load Condition Effects on Switching VDD = 25 V RG = 25 W VGS = 0 to 10 V tf td(off) 10 8 6 VDS = 60 V 4 96 V td(on) 2 tr 10 100 ID - Drain Current (A) 1000 0 0 120 240 360 480 600 Qg - Total Gate Charge (pC) 1 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 0.01 0.1 1 10 100 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) 1K 10 K t1 - Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70227 S-04279--Rev. E, 16-Jul-01 This datasheet has been download from: www..com Datasheets for electronics components. |
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