![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
SPICE Device Model SI6933DQ Vishay Siliconix Dual P-Channel Enhancement-Mode MOSFET CHARACTERISTICS * P-Channel Vertical DMOS * Macro Model (Subcircuit Model) * Level 3 MOS * Apply for both Linear and Switching Application * Accurate over the -55 to 125C Temperature Range * Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit mode is extracted and optimized over the -55 to 125C temperature ranges under the pulsed 0-to-10V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 71734 12-Oct-01 www.vishay.com 1 SPICE Device Model SI6933DQ Vishay Siliconix SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Condition Simulated Data 2.13 132 0.034 0.054 9.6 - 0.78 Measured Data Unit VGS(th) ID(on) a VDS = VGS, ID = - 250A VDS > - 5V, VGS = - 10V VGS = - 10V, ID = - 3.5A VGS = - 4.5V, ID = - 2.5A VDS = - 15V, ID = - 3.5A IS = - 1.25A, VGS = 0V V A 0.035 0.062 7.2 - 0.77 S V Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltagea a rDS(on) gfs VSD Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = - 1.25A, di/dt = 100A/s VDD = - 15V, RL = 15 ID - 1A, VGEN = - 10V, RG = 6 VDS = - 15V, VGS = - 10V, ID = - 3.5A 18 4.4 3.1 14 7.8 21 11 30 17 4.4 3.1 13 10 33 10 30 ns nC Notes a. Pulse test; pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71734 12-Oct-01 SPICE Device Model SI6933DQ Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25C UNLESS OTHERWISE NOTED) Document Number: 71734 12-Oct-01 www.vishay.com 3 |
Price & Availability of SI6933DQ
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |