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Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount envelope, configured as a single high side switch. BUK205-50Y QUICK REFERENCE DATA SYMBOL IL SYMBOL VBG IL Tj RON PARAMETER Nominal load current (ISO) PARAMETER Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance MIN. 6 MAX. 50 15 150 60 UNIT A UNIT V A C m APPLICATIONS General controller for driving lamps, motors, solenoids, heaters. FEATURES Vertical power DMOS switch Low on-state resistance 5 V logic compatible input Overtemperature protection self resets with hysteresis Overload protection against short circuit load with output current limiting; latched - reset by input High supply voltage load protection Supply undervoltage lock out Status indication for overload protection activated Diagnostic status indication of open circuit load Very low quiescent current Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery and overvoltage protection FUNCTIONAL BLOCK DIAGRAM BATT STATUS POWER MOSFET CONTROL & PROTECTION CIRCUITS LOAD GROUND RG INPUT Fig.1. Elements of the TOPFET HSS with internal ground resistor. PINNING - SOT426 PIN 1 2 3 4 5 mb DESCRIPTION Ground Input (connected to mb) Status Load Battery PIN CONFIGURATION mb SYMBOL I S 3 12 45 B TOPFET HSS G L Fig. 2. Fig. 3. July 1996 1 Rev 1.000 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VBG PARAMETER Battery voltages Continuous off-state supply voltage Reverse battery voltages1 Repetitive peak supply voltage Continuous reverse supply voltage Continuous load current Total power dissipation Storage temperature Continuous junction temperature2 Lead temperature Input and status Continuous input current Continuous status current Repetitive peak input current Repetitive peak status current Inductive load clamping EBL Non-repetitive clamping energy Tmb = 150 C prior to turn-off CONDITIONS External resistors: RI = RS 4.7 k, 0.1 RI = RS 4.7 k Tmb 115 C Tmb 25 C during soldering MIN. 0 BUK205-50Y MAX. 50 UNIT V -VBG -VBG IL PD Tstg Tj Tsold -55 - 32 16 15 83.3 175 150 250 V V A W C C C II IS II IS 0.1 0.1 -5 -5 -20 -20 5 5 20 20 mA mA mA mA 1.2 J ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k MIN. MAX. 2 UNIT kV THERMAL CHARACTERISTIC SYMBOL PARAMETER Thermal resistance Rth j-mb 3 CONDITIONS MIN. TYP. MAX. UNIT Junction to mounting base - - 1.2 1.5 K/W 1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value. 2 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 3 Of the output Power MOS transistor. July 1996 2 Rev 1.000 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y STATIC CHARACTERISTICS Tmb = 25 C unless otherwise stated SYMBOL VBG VBL -VLG PARAMETER Clamping voltages Battery to ground Battery to load Negative load to ground Supply voltage Operating range1 Currents IL IB IG IL RON RON RG Nominal load current Quiescent current3 2 BUK205-50Y CONDITIONS IG = 1 mA IL = IG = 1 mA IL = 1 mA battery to ground VBG = 13 V VBL = 0.5 V; Tmb = 85 C VIG = 0 V; VLG = 0 V VIG = 5 V; IL = 0 A VBL = 13 V; VIG = 0 V VBG = 13 V; IL = 7.5 A; tp = 300 s VBG = 5 V; IL = 1.5 A; tp = 300 s IG = 10 mA MIN. 50 50 12 TYP. 55 55 17 MAX. 65 65 21 UNIT V V V VBG 5 - 40 V 6 1.5 - 0.1 2.2 0.1 2 4 1 A A mA A Operating current4 Off-state load current5 Resistances On-state resistance6 On-state resistance Internal ground resistance - 45 70 150 60 90 - m m INPUT CHARACTERISTICS Tmb = 25 C; VBG = 13 V SYMBOL II VIG VIG(ON) VIG(OFF) PARAMETER Input current Input clamping voltage Input turn-on threshold voltage Input turn-off threshold voltage CONDITIONS VIG = 5 V II = 200 A MIN. 35 6 1.5 TYP. 60 7.5 2.1 2 MAX. 100 8.5 2.7 UNIT A V V V 1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8. 2 Defined as in ISO 10483-1. 3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load. 4 This is the continuous current drawn from the battery with no load connected, but with the input high. 5 The measured current is in the load pin only. 6 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current. July 1996 3 Rev 1.000 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y PROTECTION FUNCTIONS AND STATUS INDICATIONS Truth table for normal, open-circuit load and overload conditions and abnormal supply voltages. FUNCTIONS SYMBOL CONDITION Normal on-state Normal off-state IL(OC) Open circuit load1 Open circuit load Tj(TO) Over temperature2 Over temperature3 VBL(TO) Short circuit load4 Short circuit load VBG(TO) VBG(LP) Low supply voltage5 High supply voltage6 INPUT 1 0 1 0 1 0 1 0 X X TRUTH TABLE STATUS 1 1 0 1 0 0 0 1 1 1 OUTPUT 1 0 1 0 0 0 0 0 0 0 3 40 4 45 9 150 100 BUK205-50Y THRESHOLD MIN. TYP. MAX. UNIT 350 600 mA 175 - C 10.5 12 V 5 50 V V For input `0' equals low, `1' equals high, `X' equals don't care. For status `0' equals low, `1' equals open or high. For output switch `0' equals off, `1' equals on. STATUS CHARACTERISTICS Tmb = 25 C. The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. SYMBOL VSG VSG IS IS PARAMETER Status clamping voltage Status low voltage Status leakage current Status saturation current7 Application information External pull-up resistor8 CONDITIONS IS = 100 A; VIG = 0 V IS = 50 A; VBG = 13 V; VIG = 5 V VSG = 5 V VSS = 5 V; RS = 0 ; VBG = 13 V MIN. 6 TYP. 7 0.7 0.1 5 MAX. 8 0.8 1 UNIT V V A mA RS VSS = 5 V - 100 - k 1 In the on-state, the switch detects whether the load current is less than the quoted open load threshold current. This is for status indication only. Typical hysteresis equals 140 mA. The thresholds are specified for supply voltage within the normal working range. 2 After cooling below the reset temperature the switch will resume normal operation. The reset temperature is lower than the trip temperature by typically 10 C. 3 If the overtemperature protection has operated, status remains low to indicate the overtemperature condition even if the input is taken low, providing the device has not cooled below the reset temperature. 4 After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation. 5 Undervoltage sensor causes the device to switch off. Typical hysteresis equals 0.7 V. 6 Overvoltage sensor causes the device to switch off to protect the load. Typical hysteresis equals 1.3 V. 7 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. 8 The pull-up resistor also protects the status pin during reverse battery conditions. July 1996 4 Rev 1.000 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y DYNAMIC CHARACTERISTICS Tmb = 25 C; VBG = 13 V SYMBOL -VLG PARAMETER Inductive load turn-off Negative load voltage1 Short circuit load protection2 Response time Load current prior to turn-off Overload protection3 Load current limiting CONDITIONS VIG = 0 V; IL = 7.5 A; tp = 300 s VIG = 5 V; RL 10 m t < td sc VBL = 9 V; tp = 300 s 90 42 MIN. 15 BUK205-50Y TYP. 20 MAX. 25 UNIT V s A td sc IL - IL(lim) 28 40 52 A SWITCHING CHARACTERISTICS Tmb = 25 C, VBG = 13 V, for resistive load RL = 13 . SYMBOL td on dV/dton t on PARAMETER During turn-on Delay time Rate of rise of load voltage Total switching time During turn-off Delay time Rate of fall of load voltage Total switching time CONDITIONS to VIG = 5 V to 10% VL 16 1 40 2.5 s V/s s s V/s s MIN. TYP. MAX. UNIT to 90% VL to VIG = 0 V to 90% VL to 10% VL td off dV/dtoff t off - 30 1.2 50 2.5 - CAPACITANCES Tmb = 25 C; f = 1 MHz; VIG = 0 V SYMBOL Cig Cbl Csg PARAMETER Input capacitance Output capacitance Status capacitance CONDITIONS VBG = 13 V VBL = VBG = 13 V VSG = 5 V MIN. TYP. 15 415 11 MAX. 20 580 15 UNIT pF pF pF 1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage is clamped by the device. 2 The load current is self-limited during the response time for short circuit load protection. Response time is measured from when input goes high. 3 If the load resistance is low, but not a complete short circuit, such that the on-state voltage remains less than VBL(TO), the device remains in current limiting until the overtemperature protection operates. July 1996 5 Rev 1.000 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y BUK205-50Y 40 VBL IB II I VBG VSG RS IG IS S VIG B TOPFET HSS G IL L VLG LOAD IL / A BUK205-50Y VBG / V = 13 7 6 30 20 5 10 0 0 0.5 1 VBL / V 1.5 2 Fig.4. High side switch measurements schematic. (current and voltage conventions) Normalised Power Derating Fig.7. Typical on-state characteristics, Tj = 25 C. IL = f(VBL); parameter VBG; tp = 250 s RON / mOhm BUK205-50Y 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% 100 90 80 70 60 50 40 30 20 10 0 20 40 60 80 100 Tmb / C 120 140 0 1 10 VBG / V 100 Fig.5. Normalised limiting power dissipation. PD% = 100PD/PD(25 C) = f(Tmb) IL / A BUK205-50Y Fig.8. Typical on-state resistance, Tj = 25 C. RON = f(VBG); conditions: IL = 7.5 A; tp = 300 s RON / mOhm BUK205-50Y 20 150 15 100 VBG = 5V 13 V 10 50 typ. 5 0 0 -60 -20 20 60 Tmb / C 100 140 180 0 50 Tmb / C 100 150 Fig.6. Limiting continuous on-state load current. IL = f(Tmb); conditions: VIG = 5 V, VBG = 13 V Fig.9. Typical on-state resistance, tp = 300 s. RON = f(Tj); parameter VBG; condition IL = 1.5 A July 1996 6 Rev 1.000 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y BUK205-50Y 5 IG / mA BUK205-50Y CLAMPING 100 uA IL BUK205-50Y 4 10 uA 3 OPERATING 2 HIGH VOLTAGE 1 QUIESCENT 0 0 10 20 30 VBG / V 40 50 60 VIG = 0 V VIG = 3 V 1 uA 100 nA 10 nA 1 nA -60 -20 20 60 Tj / C 100 140 180 Fig.10. Typical supply characteristics, 25 C. IG = f(VBG); parameter VIG IG / mA BUK205-50Y Fig.13. Typical off-state leakage current. IL = f(Tj); conditions: VBL = 13 V = VBG; VIG = 0 V. II / uA BUK205-50Y 3 200 VBG / V = 2 13 150 VBG / V = 5 7 100 13 1 50 50 0 -60 -20 20 60 Tj / C 100 140 180 0 0 2 4 VIG / V 6 8 Fig.11. Typical operating supply current. IG = f(Tj); parameter VBG; condition VIG = 5 V IB BUK205-50Y Fig.14. Typical input characteristics, Tj = 25 C. II = f(VIG); parameter VBG II / uA BUK205-50Y 100 uA 100 80 10 uA 60 1 uA 40 100 nA 20 10 nA -60 -20 20 60 Tj / C 100 140 180 0 0 10 20 VBG / V 30 40 50 Fig.12. Typical supply quiescent current. IB = f(Tj); condition VBG = 13 V, VIG = 0 V, VLG = 0 V Fig.15. Typical input current, Tj = 25 C. II = f(VBG); condition VIG = 5 V July 1996 7 Rev 1.000 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y BUK205-50Y 3.0 VIG / V BUK205-50Y 10 uA IS BUK205-50Y 2.5 1 uA VIG(ON) 2.0 1.5 VIG(OFF) 100 nA 1.0 -60 -20 20 60 Tj / C 100 140 180 10 nA -60 -20 20 60 Tj / C 100 140 180 Fig.16. Typical input threshold voltages. VIG = f(Tj); conditions VBG = 13 V, IL = 80 mA VIG / V BUK205-50Y Fig.19. Typical status leakage current. IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V IS / uA BUK205-50Y 8.0 500 400 7.5 300 200 7.0 100 6.5 -60 -20 20 60 Tj / C 100 140 180 0 0 0.2 0.4 0.6 0.8 1 1.2 VSG / V 1.4 1.6 1.8 2 Fig.17. Typical input clamping voltage. VIG = f(Tj); conditions II = 200 A, VBG = 13 V IS / mA BUK205-50Y Fig.20. Typical status low characteristic, Tj = 25 C. IS = f(VSG); conditions VIG = 5 V, VBG = 13 V, IL = 0 A VSG / V BUK205-50Y 20 1 15 0.8 0.6 10 0.4 5 0.2 0 0 2 4 VSG / V 6 8 10 0 -60 -20 20 60 Tj / C 100 140 180 Fig.18. Typical status characteristic, Tj = 25 C. IS = f(VSG); conditions VIG = VBG = 0 V Fig.21. Typical status low voltage, VSG = f(Tj). conditions IS = 50 A, VIG = 5 V, VBG = 13 V, IL = 0 A July 1996 8 Rev 1.000 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y BUK205-50Y 8.0 VSG / V BUK205-50Y 47 VBG(LP) / V BUK205-50Y VIG / V = 7.5 5 46 off 45 0 7.0 44 on 6.5 -60 -20 20 60 Tj / C 100 140 180 43 -60 -20 20 60 Tj / C 100 140 180 Fig.22. Typical status clamping voltage, VSG = f(Tj). parameter VIG; conditions IS = 100 A, VBG = 13 V IL(OC) / mA BUK205-50Y Fig.25. Supply typical overvoltage thresholds. VBG(LP) = f(Tj); conditions VIG = 5 V; IL = 80 mA VBG / V BUK205-50Y 800 700 600 500 400 300 200 65 max. 60 IG = 1 mA 10 uA 55 typ. min. 100 0 -50 50 0 50 Tmb / C 100 150 200 -60 -20 20 60 Tj / C 100 140 180 Fig.23. Low load current detection threshold. IL(OC) = f(Tj); conditions VIG = 5 V; VBG = 13 V VBG(TO) / V BUK205-50Y Fig.26. Typical battery to ground clamping voltage. VBG = f(Tj); parameter IG IL / A BUK205-50Y 5 30 25 4 on 20 3 off 2 15 10 1 5 0 -25 0 -60 -20 20 60 Tj / C 100 140 180 -20 -15 VLG / V -10 -5 0 Fig.24. Supply typical undervoltage thresholds. VBG(TO) = f(Tj); conditions VIG = 3 V; IL = 80 mA Fig.27. Typical negative load clamping characteristic. IL = f(VLG); conditions VIG = 0 V, tp = 300 s, 25 C July 1996 9 Rev 1.000 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y BUK205-50Y -10 -12 -14 -16 VLG / V BUK205-50Y 0 IL / A BUK205-50Y IL = -10 1 mA -20 7.5 A -18 tp = 300 us -20 -22 -60 -20 20 60 Tj / C 100 140 180 -30 -40 -1.2 -1 -0.8 -0.6 VLB / V -0.4 -0.2 0 Fig.28. Typical negative load clamping voltage. VLG = f(Tj); parameter IL; condition VIG = 0 V. VBL / V BUK205-50Y IL = tp = 300 us 60 4A 1 mA 100 uA 55 Fig.31. Typical reverse diode characteristic. IL = f(VBL); conditions VIG = 0 V, Tj = 25 C Cbl BUK205-50Y 65 10 nF 1 nF 50 -60 -20 20 60 Tj / C 100 140 180 100 pF 0 10 20 VBL / V 30 40 50 Fig.29. Typical battery to load clamping voltage. VBL = f(Tj); parameter IL; condition IG = 5 mA. IG / mA BUK205-50Y Fig.32. Typical output capacitance. Tmb = 25 C Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V IL / A VBL(TO) typ. 50 BUK205-50Y current limiting 0 60 -50 40 30 tp = 300 us 50 us i.e. before short circuit load trip -100 20 10 -150 -20 -15 -10 VBG / V -5 0 0 0 5 10 VBL / V 15 20 25 Fig.30. Typical reverse battery characteristic. IG = f(VBG); conditions IL = 0 A, Tj = 25 C Fig.33. Typical overload characteristic, Tmb = 25 C. IL = f(VBL); condition VBG = 13 V; parameter tp July 1996 10 Rev 1.000 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y BUK205-50Y 60 50 40 30 20 10 IL / A BUK205-50Y 15 14 13 VBL(TO) / V BUK205-50Y typ. 12 11 10 9 8 7 6 0 -50 5 0 50 Tmb / C 100 150 200 -60 -20 20 60 100 Tmb / C 140 180 Fig.34. Typical overload current, VBL = 9 V. IL = f(Tmb); conditions VBG = 13 V; tp = 300 s VBL(TO) / V BUK205-50Y Fig.36. Typical short circuit load threshold voltage. VBL(TO) = f(Tmb); condition VBG = 13 V Zth j-mb / (K/W) BUK205-50Y 12 10 11 1 D= 0.5 0.2 0.1 0.1 0.05 0.02 0 1u 10u 100u 1m t/s 10m T 10 9 P D tp D= tp T t 8 0 10 20 VBG / V 30 40 0.01 100n 100m 1 10 Fig.35. Typical short circuit load threshold voltage. VBL(TO) = f(VBG); condition Tmb = 25 C Fig.37. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T July 1996 11 Rev 1.000 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y MECHANICAL DATA Dimensions in mm Net Mass: 1.5 g 10.3 MAX 1.4 MAX BUK205-50Y 4.5 MAX 11 MAX 15.4 0.85 MAX (x4) 3.4 1.7 1.7 3.4 2.5 0.5 Fig.38. SOT426 mounting base connected to centre pin (cropped short) MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 3.4 1.7 3.8 1.3 (x4) 1.7 Fig.39. SOT426 soldering pattern for surface mounting. July 1996 12 Rev 1.000 Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50Y DEFINITIONS Data sheet status Objective specification Product specification Limiting values BUK205-50Y This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1996 13 Rev 1.000 |
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