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| UMN10N Diodes Switching diode UMN10N Applications Very fast recovery External dimensions (Unit : mm) 2.00.1 Each le ad 0.25 0.1 same dimen sio n 0.05 (6) (5) (4) 0.15 0.06 0.1 Land size figure 0.65 0.65 0.10.4 Features 1) Small mold type. (UMD6) 2) High reliability 1.250.1 2.10.1 00.1 0.9 (1) (2) (3) 0.35 UMD6 0.65 0.65 1.30.1 0.70.1 0.90.1 0.20.1 0.70.1 Construction Silicon epitaxial planer Structure ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory) Taping dimensions (Unit : mm) 4.00.1 2.00.05 1.550.1 0 1.750.1 0.30.1 00.1 3.50.05 2.450.1 8.00.2 2.20.1 4.00.1 2.00.05 1.10.1 1.350.1 Absolute maximum ratings (Ta=25C) Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Forward current repetitive peak (Single) Average rectified forward current (Single) Surge current t=1us Power dis s ipation Junction tem perature Storage tem perature Sym bol VRM VR IFM Io Isurg e Pd Tj Ts tg Lim its 80 80 300 100 4 200 150 -55 to +150 Unit V V mA mA A mW Electrical characteristic (Ta=25C) Param eter Forward voltage Revers e current Capacitance between term inal Revers e recovery tim e Sym bol VF IR Ct trr Min. Typ. Max. 1.2 0.1 3.5 4 Unit V A pF ns IF =100m A VR =70V VR =6V , f=1MHz VR =6V , IF=5m A , RL=50 Conditions 2.40.1 1.6 1/3 UMN10N Diodes Electrical characteristic curves Ta=150 100 Ta=75 Ta=125 FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) 10 Ta=25 10000 1000 100 Ta=25 10 1 0.1 0.01 0 100 200 300 400 500 600 700 800 900 1000 Ta=125 10 f=1MHz Ta=150 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75 Ta=-25 1 1 Ta=-25 0.1 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 0.1 0 10 20 30 40 50 60 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 70 80 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 950 Ta=25 IF=100mA n=30pcs 100 90 REVERSE CURRENT:IR(nA) 80 70 60 50 40 30 20 10 0 VF DISPERSION MAP AVE:9.655nA Ta=25 VR=80V n=30pcs 1.5 1.4 1.3 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 AVE:1.081pF FORWARD VOLTAGE:VF(mV) 940 Ta=25 VR=6V f=1MHz n=10pcs 930 920 910 AVE:921.7mV 900 IR DISPERSION MAP Ct DISPERSION MAP 20 Ifsm 15 8.3ms 10 RESERVE RECOVERY TIME:trr(ns) 1cyc 10 9 Ta=25 VR=6V IF=5mA RL=50 n=10pcs 5 PEAK SURGE FORWARD CURRENT:IFSM(A) 7 6 5 4 3 2 1 0 AVE:1.93ns PEAK SURGE FORWARD CURRENT:IFSM(A) 8 4 Ifsm 8.3ms 8.3ms 3 1cyc 2 5 AVE:3.50A 0 IFSM DISRESION MAP 1 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 100 1000 Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 10 Rth(j-a) ELECTROSTATIC DDISCHARGE TEST ESD(KV) 9 8 7 6 5 4 3 2 1 0 C=200pF R=0 C=100pF R=1.5k AVE:0.97kV AVE:2.54kV PEAK SURGE FORWARD CURRENT:IFSM(A) 100 Rth(j-c) Mounted on epoxy board 10 IM=1mA IF=50mA 10 1ms time 300us 1 0.1 TIME:t(ms) IFSM-t CHARACTERISTICS 1 10 100 1 0.001 TIME:t(s) Rth-t CHARACTERISTICS 0.1 10 1000 ESD DISPERSION MAP 2/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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