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| SI4308DY New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 FEATURES rDS(on) (W) 0.012 @ VGS = 10 V 0.018 @ VGS = 4.5 V 0.010 @ VGS = 10 V 0.0110 @ VGS = 4.5 V ID (A) 9.6 7.8 13.5 12.8 D TrenchFETr Power MOSFET APPLICATIONS D DC-DC Converters - Game Stations - Video Graphics SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.53 V @ 3 A IF (A) 2.0 SO-14 D1 D1 G1 G2 S2 S2 S2 1 2 3 4 5 6 7 Top View 14 13 12 11 10 9 8 S1 S1 D2 D2 D2 D2 D2 D1 D2 Schottky Diode G1 G2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Channel-2 10 secs 30 Symbol VDS VGS 10 secs Steady State "20 Steady State "12 Unit V 9.6 ID IDM IS PD TJ, Tstg 1.8 2 1.28 7.7 40 7.3 5.8 13.5 10.8 50 9.9 7.6 A 1.33 1.47 0.94 W _C 1.04 1.14 0.73 -55 to 150 2.73 3.0 1.9 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Channel-1 Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71941 S-21646--Rev. B, 23-Sep-02 www.vishay.com Steady-State Steady-State RthJA RthJC Channel-2 Typ 34 70 17 Schottky Typ 40 76 21 Symbol Typ 50 90 33 Max 62.5 110 40 Max 42 85 22 Max 48 93 26 Unit _C/W C/W 1 SI4308DY Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = 250 mA m VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "12 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V, TJ = 85_C _ On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 9.6 A Drain-Source On-State Resistanceb rDS(on) VGS = 10 V, ID = 13.5 A VGS = 4.5 V, ID = 7.8 A VGS = 4.5 V, ID = 12.8 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = 15 V, ID = 9.6 A VDS = 15 V, ID = 13.5 A IS = 1.8 A, VGS = 0 V IS = 2.73 A, VGS = 0 V Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 30 0.010 0.007 0.015 0.0085 25 56 0.7 0.485 1.1 0.53 V S 0.012 0.010 0.018 0.0110 W A 0.8 0.8 1.40 1.35 2.00 1.90 100 100 1 100 15 4000 mA m nA V Symbol Test Condition Min Typa Max Unit Gate-Body Leakage Dynamica Total Gate Charge Qg Channel-1 VDS = 15 V, VGS = 5 V, ID = 9.6 A Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qgs Qgd RG td(on) tr td(off) tf trr IF = 1.8 A, di/dt = 100 A/ms IF = 2.73 A, di/dt = 100 mA/ms Channel-1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel-2 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel-2 VDS = 15 V, VGS = 5 V, ID = -13.5 A Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 11.5 40 3 10 4.5 8.8 1.45 0.8 10 17 5 14 30 102 10 26 30 40 20 26 10 21 60 155 20 40 60 65 ns W 17 60 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 3 A IF = 3 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 75_C Vr = -30 V, TJ = 125_C Vr = 15 V Min Typ 0.485 0.42 0.008 0.4 6.5 102 Max 0.53 0.42 0.100 5 20 Unit V Maximum Reverse Leakage Current Junction Capacitance Irm CT mA pF www.vishay.com 2 Document Number: 71941 S-21646--Rev. B, 23-Sep-02 SI4308DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 4 V 25 I D - Drain Current (A) I D - Drain Current (A) 25 30 Vishay Siliconix CHANNEL-1 Transfer Characteristics 20 3V 15 20 15 10 10 TC = 125_C 25_C -55 _C 5 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.025 r DS(on) - On-Resistance ( W ) 1400 1200 C - Capacitance (pF) 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 1000 800 600 Capacitance Ciss Coss 400 Crss 200 0.005 0.000 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 12.5 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 12.5 A 1.4 6 r DS(on) - On-Resistance (W) (Normalized) 8 12 16 20 24 1.2 4 1.0 2 0.8 0 0 4 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 71941 S-21646--Rev. B, 23-Sep-02 www.vishay.com 3 SI4308DY Vishay Siliconix New Product CHANNEL-1 On-Resistance vs. Gate-to-Source Voltage 0.05 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 TJ = 150_C I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.04 ID = 12.5 A 0.03 0.02 TJ = 25_C 0.01 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 200 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA -0.0 Power (W) 160 120 -0.2 80 -0.4 40 -0.6 -0.8 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 1 Square Wave Pulse Duration (sec) 10- 1 10 100 600 www.vishay.com 4 Document Number: 71941 S-21646--Rev. B, 23-Sep-02 SI4308DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix CHANNEL-1 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 3 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 CHANNEL-2 Transfer Characteristics 30 30 20 20 TC = 150_C 10 25_C -55 _C 10 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 10 0 0.0 0.8 1.6 2.4 VGS - Gate-to-Source Voltage (V) 3.2 On-Resistance vs. Drain Current 0.015 r DS(on) - On-Resistance ( W ) 6500 Capacitance Ciss VGS = 4.5 V 0.009 VGS = 10 V 0.006 C - Capacitance (pF) 0.012 5200 3900 2600 0.003 1300 Crss Coss 0.000 0 10 20 30 40 50 ID - Drain Current (A) 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Document Number: 71941 S-21646--Rev. B, 23-Sep-02 www.vishay.com 5 SI4308DY Vishay Siliconix New Product CHANNEL-2 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 13 A VGS = 10 V ID = 13 A 1.4 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 6 V GS - Gate-to-Source Voltage (V) 4 r DS(on) - On-Resistance (W) (Normalized) 5 1.2 3 1.0 2 1 0.8 0 0 10 20 30 40 50 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.030 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.025 ID = 13 A 0.020 I S - Source Current (A) TJ = 150_C 10 TJ = 25_C 0.015 0.010 0.005 1 0.0 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Reverse Current vs. Junction Temperature 100 10 200 Single Pulse Power I R - Reverse Current (mA) 160 1 VDS = 30 V 0.1 VDS = 24 V Power (W) 120 80 0.01 40 0.001 0.0001 0 25 50 75 100 125 150 TJ - temperature (_C) 0 0.001 0.01 0.1 Time (sec) 1 10 www.vishay.com 6 Document Number: 71941 S-21646--Rev. B, 23-Sep-02 SI4308DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix CHANNEL-2 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90_C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 100 10 I R - Reverse Current (mA) I F - Forward Current (A) 1 5 SCHOTTKY Forward Voltage Drop TJ = 150_C 1 0.1 30 V 20 V 0.01 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 0.1 0 0.2 0.4 0.6 0.8 TJ - Junction Temperature (_C) Document Number: 71941 S-21646--Rev. B, 23-Sep-02 VF - Forward Voltage Drop (V) www.vishay.com 7 SI4308DY Vishay Siliconix New Product SCHOTTKY TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 500 Capacitance C T - Junction Capacitance (pF) 400 300 200 100 0 0 6 12 18 24 30 VKA - Reverse Voltage (V Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 8 Document Number: 71941 S-21646--Rev. B, 23-Sep-02 |
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