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| SI4837DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES ID (A) 8.3 6.8 MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (W) 0.020 @ VGS = -10 V 0.030 @ VGS = -4.5 V D TrenchFETr Power MOSFET D LITTLE FOOT Plust Schottky APPLICATIONS D Battery Charging D DC/DC Converters - Asynchronous Buck - Voltage Inverter SCHOTTKY PRODUCT SUMMARY VKA (V) 30 Vf (V) Diode Forward Voltage 0.53 V @ 3 A IF (A) 3 S K SO-8 K S S G 1 2 3 4 Top View 8 7 6 5 A D D D G D P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b _ Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 71662 S-04246--Rev. A, 16-Jul-01 www.vishay.com TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM 10 Sec -30 30 "20 -8.3 -6.6 -40 -2.3 3 20 2.5 1.6 1.5 0.98 Steady State Unit V -6.1 -4.9 A -1.25 1.38 0.88 1.0 0.64 -55 to 150 _C W 1 SI4837DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t v 10 sec)a New Product Device MOSFET Schottky MOSFET Symbol Typical 37 65 Maximum 50 81 90 125 25 62.5 Unit RthJA 70 100 20 Maximum Junction-to-Ambient (t = steady state)a Schottky MOSFET RthJF _C/W _ Maximum Junction-to-Foot (Drain) Schottky 50 Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V, TJ = 75_C VDS w -5 V, VGS = -10 V VGS = -10 V, ID = -8.3 A VGS = -4.5 V, ID = -6.8 A VDS = -15 V, ID = -8.3 A IS = -2.3 A, VGS = 0 V -20 0.0165 0.0245 22 -0.75 -1.1 0.020 0.030 W S V -1.0 "100 -1 -10 V nA mA m A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = -2.3 A, di/dt = 100 A/ms VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W VDS = -15 V, VGS = -5 V, ID = -8.3 A 22 9 6.6 1.9 17 15 56 21 45 26 23 85 32 70 ns W 33 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 3 A IF = 3 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 75_C Vr = 30 V, TJ = 125_C Vr = 15 V Min Typ 0.485 0.42 0.008 0.4 6.5 102 Max 0.53 0.47 0.1 5 20 Unit V Maximum Reverse Leakage Current Irm CT mA Junction Capacitance pF www.vishay.com 2 Document Number: 71662 S-04246--Rev. A, 16-Jul-01 SI4837DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Vishay Siliconix MOSFET Transfer Characteristics 30 4V 30 20 20 TC = 125_C 10 25_C -55_C 0 10 3V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 3500 Capacitance r DS(on)- On-Resistance ( W ) Ciss 0.04 C - Capacitance (pF) 2800 0.03 VGS = 4.5 V VGS = 10 V 2100 0.02 1400 Coss 700 Crss 0.01 0.00 0 10 20 30 40 50 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 8.3 A r DS(on)- On-Resistance ( W ) (Normalized) 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 8.3 A 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 8 16 24 32 40 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71662 S-04246--Rev. A, 16-Jul-01 www.vishay.com 3 SI4837DY Vishay Siliconix New Product MOSFET On-Resistance vs. Gate-to-Source Voltage 0.070 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 r DS(on)- On-Resistance ( W ) I S - Source Current (A) 0.056 TJ = 150_C 10 0.042 0.028 ID = 8.3 A TJ = 25_C 0.014 1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.000 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.8 200 Single Pulse Power, Junction-to-Ambient 0.6 VGS(th) Variance (V) ID = 250 mA Power (W) 160 0.4 120 0.2 80 0.0 40 -0.2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71662 S-04246--Rev. A, 16-Jul-01 SI4837DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix MOSFET Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 100 10 I R - Reverse Current (mA) I F - Forward Current (A) 1 5 SCHOTTKY Forward Voltage Drop TJ = 150_C 1 0.1 30 V 20 V 0.01 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 0.1 0 0.2 0.4 0.6 0.8 TJ - Junction Temperature (_C) VF - Forward Voltage Drop (V) 500 Capacitance CT - Junction Capacitance (pF) 400 300 200 100 0 0 6 12 18 24 30 VKA - Reverse Voltage (V Document Number: 71662 S-04246--Rev. A, 16-Jul-01 www.vishay.com 5 SI4837DY Vishay Siliconix New Product SCHOTTKY TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 6 Document Number: 71662 S-04246--Rev. A, 16-Jul-01 |
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