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| AOU417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOU417 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AOU417 is Pbfree (meets ROHS & Sony 259 specifications). AOU417L is a Green Product ordering option. AOU417 and AOU417L are electrically identical . Features VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 22m (VGS = -10V) RDS(ON) < 40m (VGS = -4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=25C TC=100C C Maximum -30 20 -18 -18 -40 -18 16.2 50 25 -55 to 175 Units V V A A mJ W C TA=25C G TA=100C G ID IDM IAR EAR PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case C Steady-State Steady-State Symbol RJA RJL Typ 105 2.5 Max 125 3 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU417 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-18A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-10A Forward Transconductance VDS=-5V, ID=-18A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.4 -40 18 25 29 21 -0.7 -1 -1.2 1573 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 319 211 6.7 29.3 VGS=-10V, VDS=-15V, ID=-18A 15 6.1 7 11.7 VGS=-10V, VDS=-15V, RL=0.83, RGEN=3 IF=-18A, dI/dt=100A/s 29 42 32.5 28.3 20.5 37 10 35 18 1900 22 30 40 -2 Min -30 -1 -5 100 -2.7 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-18A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. E. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. Rev1: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 -ID (A) -ID(A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 35 30 RDS(ON) (m) 25 20 15 10 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=-10V VGS=-4.5V 1.6 Normalized On-Resistance VGS=-3V -3.5V -5V -4V 20 15 10 125C 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 25C 30 -10V 25 VDS=-5V 1.4 VGS=-10V ID=-18A VGS=-4.5V ID=-10A 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 60 50 40 RDS(ON) (m) 30 20 10 0 3 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 25C -IS (A) 125C ID=-18A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. AOU417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 5 10 15 20 25 30 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-18A Capacitance (pF) 2500 2000 1500 1000 500 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 200 160 Power (W) 120 80 40 0 0.0001 0.1 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W TJ(Max)=175C TA=25C Coss Crss Ciss 100 TJ(Max)=175C, TA=25C 10s 10s -ID (Amps) 10 RDS(ON) limited 1 100m 10s 1s DC 100s 1ms 10ms 0.1 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton T 10 100 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 -ID(A), Peak Avalanche Current 40 30 20 10 0 0.00001 TA=25C Power Dissipation (W) L ID tA = BV - VDD 60 50 40 30 20 10 0 0.0001 0.001 0 25 50 75 100 125 150 175 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability TCASE (C) Figure 13: Power De-rating (Note B) 20 Current rating -ID(A) 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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