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| ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -30V: RDS(on) = 0.045 : ID = -7.5A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT223 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT223 package APPLICATIONS * DC-DC converters * Power management functions * Relay and soleniod driving * Motor control PINOUT ORDERING INFORMATION DEVICE ZXMP3A16GTA ZXMP3A16GTC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 1000 units 4000 units Top View DEVICE MARKING * ZXMP 3A16 ISSUE 2 - JULY 2004 1 ZXMP3A16G ABSOLUTE MAXIMUM RATING PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V GS = -10V; T A =25C)(b) (V GS = -10V; T A =70C)(b) (V GS = -10V; T A =25C)(a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power Dissipation at T A =25C (a) Linear Derating Factor Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID LIMIT -30 20 -7.5 -6.0 -5.4 -24.9 -3.2 -24.9 2.0 16 3.9 31 -55 to +150 UNIT V V A I DM IS I SM PD PD T j :T stg A A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 62.5 32.2 UNIT C/W C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature. ISSUE 2 - JULY 2004 2 ZXMP3A16G TYPICAL CHARACTERISTICS -ID Drain Current (A) 10 Limited 1 Max Power Dissipation (W) RDS(on) 2.0 1.6 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 140 160 DC 1s 100ms 10ms Single Pulse Tamb=25C 1ms 100s 100m 10m -VDS Drain-Source Voltage (V) 1 10 Temperature (C) Safe Operating Area 70 Derating Curve Thermal Resistance (C/W) 60 50 40 30 20 10 MaximumPower (W) Tamb=25C 100 Single Pulse Tamb=25C D=0.5 10 D=0.2 D=0.1 Single Pulse D=0.05 0 100 1m 10m 100m 1 10 100 1k 1 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation ISSUE 2 - JULY 2004 3 ZXMP3A16G ELECTRICAL CHARACTERISTICS (at TA = 25C unless otherwise stated). PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr -0.85 21.2 18.7 -0.95 V ns nC T J =25 C, I S =-3.6A, V GS =0V T J =25 C, I F =-2A, di/dt= 100A/ s t d(on) tr t d(off) tf Qg Qg Q gs Q gd 3.8 6.1 35 19 12.9 24.9 2.67 3.86 ns ns ns ns nC nC nC nC V DS =-15V,V GS =-10V, I D =-4.2A V DS =-15V,V GS =-5V, I D =-4.2A V DD =-15V, I D =-1A R G =6.0 , V GS =-10V C iss C oss C rss 970 169 116 pF pF pF V DS =-15V, V GS =0V, f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 9.2 -1.0 0.045 0.070 S -30 -1 100 V A nA V I D =-250A, V GS =0V V DS =-30V, V GS =0V V GS = 20V, V DS =0V I =-250 A, V DS = V GS D SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V GS =-10V, I D =-4.2A V GS =-4.5V, I D =-3.4A V DS =-15V,I D =-4.2A NOTES (1) Measured under pulsed conditions. Width 300 s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JULY 2004 4 ZXMP3A16G TYPICAL CHARACTERISTICS T = 25C 10V 4V -ID Drain Current (A) 10 -ID Drain Current (A) 3.5V 3V 2.5V 2V -VGS T = 150C 10V 4V 10 3.5V 3V 2.5V 2V 1.5V 1 1 -VGS 0.1 1.5V 0.1 0.01 0.1 -VDS Drain-Source Voltage (V) 1 10 0.01 0.1 -VDS Drain-Source Voltage (V) 1 10 Output Characteristics 1.6 T = 150C T = 25C Output Characteristics VGS = -10V ID = -4.2A RDS(on) Normalised RDS(on) and VGS(th) 10 -ID Drain Current (A) 1.4 1.2 1.0 0.8 0.6 0.4 -50 0 1 VGS(th) VGS = VDS ID = -250uA -VDS = 10V 0.1 1 2 3 50 100 150 -VGS Gate-Source Voltage (V) Tj Junction Temperature (C) Typical Transfer Characteristics RDS(on) Drain-Source On-Resistance () Normalised Curves v Temperature 100 -ISD Reverse Drain Current (A) 100 10 1 0.1 0.01 0.01 1.5V -VGS 2V T = 25C T = 150C 10 1 0.1 T = 25C 2.5V 3V 3.5V 4V 10V 0.1 1 10 0.01 0.0 On-Resistance v Drain Current -ID Drain Current (A) -VSD Source-Drain Voltage (V) 0.2 0.4 0.6 0.8 1.0 1.2 Source-Drain Diode Forward Voltage ISSUE 2 - JULY 2004 5 ZXMP3A16G CHARACTERISTICS C Capacitance (pF) 1200 1000 800 600 400 200 0 0.1 1 CISS COSS -VGS Gate-Source Voltage (V) 1400 10 VGS = 0V f = 1MHz -ID = 4.2A 8 6 4 2 -VDS = 15V CRSS 10 0 0 5 10 15 20 25 -VDS - Drain - Source Voltage (V) Q - Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Current Regulator QG 50k 12V 0.2F 0.3F Same as D.U.T -10V QGS QGD IG VDS D.U.T VG VGS ID Charge Basic Gate Charge Waveform Gate Charge Test Circuit VGS 10% VGS RG RD VDS Vcc 90% VDS td(on) tr -10V td(off) tf Pulse Width < 1S Duty Factor 0.1% Switching Time Waveforms Switching Time Test Circuit ISSUE 2 - JULY 2004 6 ZXMP3A16G PACKAGE OUTLINE PAD LAYOUT DETAILS PACKAGE DIMENSIONS Millimeters DIM Min A A1 b b2 C D 0.02 0.66 2.90 0.23 6.30 Max 1.80 0.10 0.84 3.10 0.33 6.70 Min 0.0008 0.026 0.114 0.009 0.248 Max 0.071 0.004 0.033 0.122 0.013 0.264 e e1 E E1 L Inches DIM Min Max Min Max 2.30 BSC 4.60 BSC 6.70 3.30 0.90 7.30 3.70 0.0905 BSC 0.181 BSC 0.264 0.130 0.355 0.287 0.146 Millimeters Inches (c) Zetex Semiconductors plc 2004 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JULY 2004 7 |
Price & Availability of ZXMP3A16GTA
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