SOT323 NPN SILICON PLANAR VHF/UHF TRANSISTOR
ISSUE 1 - DECEMBER 1998 PARTMARKING DETAIL - T5
ZUMT918
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 30 15 3 100 330 -55 to +150 UNIT V V V mA mW C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO MIN. 30 15 3 0.05 0.4 1.0 20 600 3.0 1.7 1.6 6.0 15 MHz pF pF pF dB dB TYP. MAX. UNIT V V V A V V CONDITIONS. IC=1A, IE=0 IC=3mA, IB=0* IE=10A, IC=0 VCB=15V, IE=0 IC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, VCE=1V IC=4mA, VCE=10V f=100MHz VCB=0V, f=1MHz VCB=10V, f=1MHz VEB=0.5V,f=1MHz VCE=6V, IC=1mA f=60MHz, RG=400 VCB=12V, IC=6mA f=200MHz
Collector Cut-Off Current ICBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Input Capacitance Noise Figure Common Emitter Power Gain VCE(sat) VBE(sat) hFE fT Cobo Cibo N Gpe
*Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% Spice parameter data is available upon request for this device
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