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| Previous Datasheet Index Next Data Sheet PD -9.1217 IRL620 HEXFET (R) Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at V GS = 4V & 5V Fast Switching Ease of paralleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. VDSS = 200V RDS(on) = 0.80 ID = 5.2A Absolute Maximum Ratings Parameter ID @ T C = 25C ID @ T C = 100C IDM PD @T C = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 5.0V Continuous Drain Current, V GS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 5.2 3.3 21 50 0.40 10 125 5.2 5.0 5.0 -55 to + 150 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. -- -- -- Typ. -- 0.50 -- Max. 2.5 -- 62 Units C/W To Order Revision 0 Previous Datasheet Index Next Data Sheet IRL620 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. Typ. Max. Units Conditions 200 -- -- V VGS = 0V, ID = 250A -- 0.27 -- V/C Reference to 25C, I D = 1mA -- -- 0.80 VGS = 5.0V, I D = 3.1A -- -- 1.0 VGS = 4.0V, I D = 2.6A 1.0 -- 2.0 V VDS = VGS, ID = 250A 1.2 -- -- S VDS = 50V, ID = 3.1A -- -- 25 VDS = 200V, VGS = 0V A -- -- 250 VDS = 160V, VGS = 0V, T J = 125C -- -- 100 VGS = 10V nA -- -- -100 VGS = -10V -- -- 16 ID = 5.2A -- -- 2.7 nC VDS = 160V -- -- 9.6 VGS = 5.0V, See Fig. 6 and 13 -- 4.2 -- VDD = 100V ns -- 31 -- ID = 9.0A -- 18 -- RG = 6.0 -- 17 -- RD = 11, See Fig. 10 Between lead, -- 4.5 -- 6mm (0.25in.) nH from package -- 7.5 -- and center of die contact -- 360 -- VGS = 0V -- 91 -- pF VDS = 25V -- 27 -- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units -- -- -- -- -- -- -- -- 180 1.1 5.2 A 21 1.8 270 1.7 V ns C Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, I S = 5.2A, V GS = 0V TJ = 25C, I F = 5.2A di/dt = 100A/s S+LD) Intrinsic turn-on time is negligible (turn-on is dominated by L Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 5.2A, di/dt 120A/s, V DD V(BR)DSS, T J 150C Pulse width 300s; duty cycle 2%. VDD = 50V, starting T J = 25C, L = 6.9mH R G = 25, IAS = 5.2A. (See Figure 12) To Order Previous Datasheet Index Next Data Sheet IRL620 ID, Drain Current (Amps) Fig 1. Typical Output Characteristics, TC = 25oC I , Drain-to-Source Current (A) D Fig 2. Typical Output Characteristics, TC = 150oC Fig 3. Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (Amps) Fig 4. Normalized On-Resistance Vs. Temperature To Order Previous Datasheet Index Next Data Sheet IRL620 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage VGS, Gate-to-Source Voltage (volts) Capacitance (pF) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage ISD, Reverse Drain Current (Amps) Fig 7. Typical Source-Drain Diode Forward Voltage ID, Drain Current (Amps) Fig 8. Maximum Safe Operating Area To Order Previous Datasheet Index Next Data Sheet IRL620 VDS VGS RG VDD RD D.U.T. ID, Drain Current (Amps) 5.0 V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case To Order Previous Datasheet Index Next Data Sheet IRL620 5.0V Fig 12a. Unclamped Inductive Test Circuit EAS, Single Pulse Energy (mJ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms 5.0V Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit To Order Previous Datasheet Index Next Data Sheet IRL620 dv/dt Test Circuit Peak Diode Recovery Test Circuit To Order Previous Datasheet Index Next Data Sheet IRL620 Package Outline - TO-220AB Part Marking Information - TO-220AB WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. To Order |
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