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| Semiconductor TMF8901F Si RF LDMOS Transistor SOT-89 Unit in mm Applications - VHF and UHF wide band amplifier 4 Features - Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz - Drain efficiency D = 60 % (typ.) Marking 4 Pin Configuration 1. Gate 2. Source 8901 1 2 3 3. Drain 4. Source Absolute Maximum Ratings (TA = 25 ) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID Ptot Tch Tstg Ratings 13.0 4.0 1.2 3 150 -65 ~ 150 Unit V V A W TMF8901F Electrical Characteristics (TA = 25 ) Parameter Gate to Source Leakage Current Drain to Source Leakage Current Threshold Voltage Transconductance Drain to Source Breakdown Voltage Drain to Source On-Voltage Power Gain Output Power Operating Current Drain Efficiency Power Gain Output Power Operating Current Drain Efficiency Symbol IGSS IDSS Vth Gm BVDSS VDSon GP POUT Iop D GP POUT Iop D f = 470 MHz, PIN = 15 dBm VDS = 4.5 V, IDset = 50 f = 470 MHz, PIN = 15 dBm VDS = 4.5 V, IDset = 50 Test Conditions VGSS = 3.0 V VDSS = 8.5 V, VGS = 0 V VDS = 4.8 V, ID = 1 VDS = 4.8 V, ID = 400 IDSS = 10 VGS = 4 V, ID = 600 f = 470 MHz, PIN = 20 dBm VDS = 4.5 V, IDset = 200 f = 470 MHz, PIN = 20 dBm VDS = 4.5 V, IDset = 200 13 0.4 12.5 32 670 60 14 29 400 44 0.8 1.0 700 Min. Typ. Max. 1 10 1.4 Unit V mS V V dB dBm mA % dB dBm mA % TMF8901F Typical Characteristics ( TA = 25, unless otherwise specified) Output Power, Power Gain, Drain Efficiency vs. Input Power 40 35 f = 470 MHz Iidle = 200 mA VDS = 4.5 V POUT D 80 70 40 35 f = 470 MHz Iidle = 50 mA VDS = 4.5 V POUT 80 70 60 50 D Output Power, POUT (dBm) Power Gain, GP (dB) Output Power, POUT (dBm) Power Gain, GP (dB) Drain Efficiency, D (%) 30 25 20 15 10 5 0 0 5 10 15 20 GP 60 50 40 30 20 10 0 25 30 25 20 15 10 5 0 0 5 10 15 20 GP 40 30 20 10 0 25 Input Power, PIN (dBm) Input Power, PIN (dBm) Output Power vs. Input Power 40 35 f = 470 MHz VDS = 4.5 V Iidle = 200 mA Drain Current vs. Input Power 900 800 f = 470 MHz VDS = 4.5 V Output Power, POUT (dBm) 30 25 20 15 10 5 0 0 5 10 15 20 25 Iidle = 50 mA Drain Current, IDS (mA) 700 600 500 400 300 200 100 0 0 5 10 15 20 25 Iidle = 50 mA Iidle = 200 mA Input Power, PIN (dBm) Input Power, PIN (dBm) Drain Efficiency, D (%) TMF8901F Power Gain, Drain Efficiency vs. Drain Voltage 18 17 f = 470 MHz Iidle = 200 mA PIN = 20 dBm 65 D Power Gain, Drain Efficiency vs. Drain Current 70 18 17 f = 470 MHz PIN = 20 dBm VDS = 4.5 V D 70 68 Drain Efficiency, D (%) Power Gain, GP (dB) Power Gain, GP (dB) 16 15 14 13 GP 12 11 10 2 3 4 5 6 7 8 15 14 13 12 11 10 9 GP 64 62 60 58 56 54 52 0 50 100 150 200 250 50 300 60 55 50 8 Drain Voltage, VDS (V) Drain Idle Current, Iidle (mA) Output Power vs. Input Power 40 35 f = 470 MHz Iidle = 200 mA VDS = 6 V Drain Current vs. Input Power 1100 1000 900 f = 470 MHz Iidle = 200 mA VDS = 6.0 V VDS = 4.5 V Output Power, POUT (dBm) Drain Current, IDS (mA) 30 25 20 15 10 5 0 5 10 15 800 700 600 500 400 300 200 100 VDS = 3.6 V VDS = 4.5 V VDS = 3.6 V 20 25 0 0 5 10 15 20 25 Input Power, PIN (dBm) Input Power, PIN (dBm) Drain Efficiency, D (%) 16 66 TMF8901F Output Power, Power Gain, Drain Efficiency vs. Input Power 40 35 f = 470 MHz Iidle = 200 mA VDS = 3.6 V 80 70 40 35 f = 470 MHz Iidle = 50 mA VDS = 6.0 V POUT 80 70 60 50 D Output Power, POUT (dBm) Power Gain, GP (dB) Output Power, POUT (dBm) Power Gain, GP (dB) Drain Efficiency, D (%) 30 25 20 15 10 5 0 0 5 10 15 20 GP D 60 50 40 30 20 10 0 25 30 25 20 15 10 5 0 0 5 10 15 20 POUT 40 30 20 10 0 25 GP Input Power, PIN (dBm) Input Power, PIN (dBm) Test Circuit Schematic Diagram VGG R1 R=6.8 kOhm C6 C=100 nF C5 C=10 nF L2 L=100 nH R= T L1 Subst="M Sub1" W=1.37 m m L=22 m m L1 M odel=0.4x2.0x6T C7 C=10 nF C8 C=100 nF VDD C4 C=2.2 nF C1 C=2.2 nF T M F8901F P_IN C2 C=24 pF C9 C=2.2 nF R2 R=56 Ohm T L2 Subst="M Sub1" W=1.37 m m L=15 m m P_OUT C3 C=18 pF Test Board : 0.8mm FR4 glass epoxy Drain Efficiency, D (%) |
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