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| STGF7NB60SL N-CHANNEL 7A - 600V - TO-220FP PowerMESHTM IGBT Table 1: General Features TYPE STGF7NB60SL s s s s s Figure 1: Package IC @100C 40 A VCES 200 V VCE(sat) (Max) @25C < 0.045 POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 1 2 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). Figure 2: Internal Schematic Diagram APPLICATIONS LIGHT DIMMER s STATIC RELAYS s Table 2: Order Codes SALES TYPE STGF7NB60SL MARKING GF7NB60SL PACKAGE TO-220FP PACKAGING TUBE Rev. 2 June 2004 1/9 STGF7NB60SL Table 3: Absolute Maximum ratings Symbol VCES VECR VGE IC IC ICM (1) PTOT VISO Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at 25C Collector Current (continuous) at 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Insulation Withstand Voltage A.C. Storage Temperature Operating Junction Temperature Value 600 20 20 15 7 20 25 0.2 2500 - 55 to 150 Symbol V V V A A A W W/C V C (1)Pulse width limited by max. junction temperature. Table 4: Thermal Data Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 5 62.5 C/W C/W ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: Off Symbol VBR(CES) VBR(ECS) ICES Parameter Collectro-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current (VCE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 IC = 1mA, VGE = 0 VGE = Max Rating Tc=25C Tc=125C VGE = 20 V , VCE = 0 Min. 600 20 Typ. Max. Unit V V 10 100 100 A A nA IGES Table 6: On Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE= VGE, IC= 250 A VGE=4.5 V, IC= 7A, Tj= 25C VGE=4.5 V, IC= 7A, Tj= 125C Min. 1.2 1.2 1.1 Typ. Max. 2.4 1.6 Unit V V V 2/9 STGF7NB60SL ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol gfs Cies Coes Cres Qg Qge Qgc ICL tscw Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-Off SOA Minimum Current Short Circuit Withstand Time Test Conditions VCE = 15 V, IC= 7 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 5 800 60 10 16 2.5 8.5 20 14 22 Max. Unit S pF pF pF nC nC nC A s VCE = 480V, IC = 7 A, VGE = 5V (see Figure 20) Vclamp = 480 V , Tj = 125C RG = 1 K, VGE=5V Vce = 0.5 VBR(CES), VGE=5V, Tj = 125C , RG = 1K Test Conditions VCC = 480 V, IC = 7 A RG=1K , VGE = 5 V (see Figure 18) VCC= 480 V, IC = 7 A RG=1K VGE = 5 V,Tj = 125C Test Conditions Vcc = 480 V, IC = 7 A, RGE = 1K , VGE = 5 V (see Figure 18) Min. Min. Table 8: Switching On Symbol td(on) tr (di/dt)on Eon Symbol tc tr(Voff) td(off) tf Eoff(**) tc tr(Voff) td(off) tf Eoff(**) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses Typ. 1.1 0.25 45 2.7 Max. Unit s s A/s mJ Table 9: Switching Off Parameter Cross-over Time Off Voltage Rise Time Delay Time Current Fall Time Turn-off Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Vcc = 480 V, IC = 7 A, RGE = 1K , VGE = 5 V Tj = 125 C (see Figure 18) Typ. 2.7 1.6 5.2 1.1 4.1 4.4 2.4 6.4 1.7 7.1 Max. Unit s s s s mJ s s s s mJ (**)Turn-off losses include also the tail of the collector current. 3/9 STGF7NB60SL Figure 3: Output Characteristics Figure 6: Transfer Characteristics Figure 4: Transconductance Figure 7: Collector-Emitter On Voltage vs Temperature Figure 5: Collector-Emitter On Voltage vs Collector Current Figure 8: Normalized Collector-Emitter On Voltage vs Temperature 4/9 STGF7NB60SL Figure 9: Gate Thereshold vs Temperature Figure 12: Normalized Breakdown Voltage vs Temperature Figure 10: Capacitance Variations Figure 13: Gate Charge vs Gate-Emitter Voltage Figure 11: Total Switching Losses vs Gate Resistance Figure 14: Total Switching Losses vs Temperature 5/9 STGF7NB60SL Figure 15: Total Switching Losses vs Collector Current Figure 17: Turn-Off SOA Figure 16: Thermal Impedance 6/9 STGF7NB60SL Figure 18: Test Circuit for Inductive Load Switching Figure 20: Gate Charge Test Circuit Figure 19: Switching Waveforms 7/9 STGF7NB60SL Table 10: Revision History Date 04-June-2004 Revision 2 Description of Changes Stylesheet update. No content change 8/9 STGF7NB60SL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 9/9 |
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