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| DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 25 V (Min) hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA 1 B 2 C 3 E 0.175 - 0.185 (4.450 - 4.700) LOGOXYY 1 2 3 0.135 - 0.145 (3.429 - 3.683) ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature -55 Degrees C to Operating Junction Temperature POWER DISSIPATION (NOTES 2 & 3) Total Device Dissipation at TA = 25 Deg C VOLTAGES & CURRENT VCEO Collector to Emitter VCBO Collector to Base VEBO Emitter to Base IC Collector Current 150 Degrees C 150 Degrees C 2N 6076 0.175 - 0.185 (4.450 - 4.700) SEATING 625 mW 0.500 (12.70) PLANE MIN 25 V 25 V 5V 500 mA 0.016 - 0.021 (0.410- 0.533) 0.045 - 0.055 (1.143- 1.397) 0.095 - 0.105 (2.413 - 2.667) ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated) SYM BVCBO BVCEO BVEBO ICBO ICES IEBO hFE VCE(sat) VBE(sat) VBE(on) CHARACTERISTICS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base -Emitter On Voltage MIN MAX 25 25 5 100 10 100 100 100 500 0.25 0.8 0.5 1.2 UNITS V V V nA uA nA uA V V V TEST CONDITIONS IC = IC = IE = 100 uA 10 mA 10 uA VCB = 25 V VCB = 25 V , T=+100C VCE = 25 V VEB = 3.0 V VCE = 10 V IC = 10 mA IC = 10mA IB = 1.0mA IC = 10mA IB = 1.0mA VCE = 10 V IC = 10mA (c)1998 Fairchild Semiconductor Corporation 2n6076.ppt6894 revA DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR ELECTRICAL CHARACTERISTICS Con't (25 Degrees C Ambient Temperature unless otherwise stated) SYM Ccb hfe CHARACTERISTICS Output Capacitance Small Signal Current Gain MIN MAX UNITS 1 100 13 750 pF TEST CONDITIONS VCB = 10 V, f = 1 MHz VCE = 10 V, IC=10 mA, f =1KHz NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150 degrees C. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G |
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