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| NTJS4151P Trench Power MOSFET -20 V, -4.2 A, Single P-Channel, SC-88 Features * Leading Trench Technology for Low RDS(ON) Extending Battery Life * SC-88 Small Outline (2x2 mm) for Maximum Circuit Board * Gate Diodes for ESD Protection * Pb-Free Package is Available Applications http://onsemi.com V(BR)DSS -20 V RDS(on) Typ 47 mW @ -4.5 V 70 mW @ -2.5 V 180 mW @ -1.8 V -4.2 A ID Max Utilization, Same as SC-70-6 * High Side Load Switch * Cell Phones, Computing, Digital Cameras, MP3s and PDAs D SC-88 (SOT-363) 1 6 D MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25 C TA = 85 C TA = 25 C TA = 25 C tp = 10 ms PD IDM TJ, TSTG IS TL ESD Symbol VDSS VGS ID Value -20 12 -3.3 -2.4 -4.2 1.0 -10 -55 to 150 -1.3 260 4000 W A Unit V V A G 3 Top View 4 S D 2 5 D MARKING DIAGRAM & PIN ASSIGNMENT D 1 SC-88/SOT-363 CASE 419B 1 D TY M G D G = Device Code = Date Code = Pb-Free Package 6 TY M G G D S Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) ESD Human Body Model (HBM) C A C V THERMAL RESISTANCE RATINGS (Note 1) Parameter Junction-to-Ambient - Steady State Junction-to-Ambient - t 5 s Junction-to-Lead - Steady State Symbol RqJA RqJA RqJL Max 125 75 45 Unit C/W (Note: Microdot may be in either location) ORDERING INFORMATION Device NTJS4151PT1 NTJS4151PT1G Package SC-88 SC-88 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2006 February, 2006 - Rev. 1 1 Publication Order Number: NTJS4151P/D NTJS4151P ELECTRICAL CHARACTERISTICS (TJ=25C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, ID = -250 mA VGS = -16 V, VDS = 0 V TJ = 25C TJ = 85C -20 -12 -1.0 -5.0 1.5 10 mA mA V mV/C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current VDS = 0 V, VGS = 4.5 V VDS = 0 V, VGS = 12 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = -250 mA VGS = -4.5 V, ID = -3.3 A VGS = -2.5 V, ID = -2.3 A VGS = -1.8 V, ID = -1.0 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR Ta Tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = -1.3 A VGS = 0 V, IS = -1.3 A, TJ = 25C -0.75 63 9.0 54 0.23 nC -1.2 V ns td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -10 V, ID = -1.0 A, RG = 6.0 W 0.85 1.7 2.7 4.2 ms CISS COSS CRSS QG(TOT) QGS QGD VGS = -4.5 V, VDS = -10 V, ID = -3.3 A VGS = 0 V, f = 1.0 MHz, VDS = -10 V 850 160 110 10 1.5 2.8 nC pF gFS VGS = -10 V, ID = -3.3 A -0.40 4.0 47 70 180 12 60 85 205 S -1.2 V mV/C mW 2. Pulse Test: pulse width 300 ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTJS4151P 5 4 -ID, DRAIN CURRENT (A) VGS = -1.8 V VGS = -2.4 V VGS = -2.0 V VGS = -2.8 V to 6.0 V 2 . TJ = 25C -ID, DRAIN CURRENT (A) 4 3 2 1 0 VDS w -10 V 3 VGS = -1.6 V VGS = -1.4 V 1 VGS = -1.0 V 0 0 2 4 VGS = -1.2 V 6 8 0 1 2 3 4 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 -VGS, GATE-TO-SOURCE VOLTAGE (V) ID = -3.3 A TJ = 25C 0.6 0.5 0.4 0.3 0.2 0.1 0 1 Figure 2. On-Region Characteristics TJ = 25C VGS = -1.8 V VGS = -2.5 V VGS = -4.5 V 2 3 -ID, DRAIN CURRENT (A) 4 5 Figure 3. On-Resistance versus Gate-to-Source Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 100000 1.6 1.4 1.2 1 0.8 0.6 -50 100 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 ID = -3.3 A VGS = 4.5 V -IDSS, LEAKAGE (nA) 10000 VGS = 0 V TJ = 150C 1000 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature http://onsemi.com 3 Figure 6. Drain-to-Source Leakage Current versus Voltage NTJS4151P -VGS, GATE-TO-SOURCE VOLTAGE (V) 5 QT 4 VDS 3 2 Qgs 1 0 0 2 4 6 8 10 QG, TOTAL GATE CHARGE (nC) Qgd ID = -3.3 A TJ = 25C VGS 15 12 9 6 3 0 12 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1250 1000 CISS 750 500 250 0 0 4 8 12 16 VGS = 0 V TJ = 25C C, CAPACITANCE (pF) 20 Figure 7. Capacitance Variation 10000 -IS, SOURCE CURRENT (A) tf td(off) tr td(on) 3 2.5 2 1.5 1 0.5 0 Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge VGS = 0 V TJ = 25C t, TIME (ns) 1000 100 1 10 RG, GATE RESISTANCE (W) 100 0.4 0.5 0.6 0.7 0.8 0.9 -VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 NTJS4151P PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W D e A3 6 5 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. DIM A A1 A3 b C D E e L HE MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 HE 1 2 3 -E- C b 6 PL 0.2 (0.008) A M L E M A1 SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 NTJS4151P/D |
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