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FDS6294
November 2003
FDS6294
30V N-Channel Fast Switching PowerTrench(R) MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
* 13 A, 30 V. RDS(ON) = 11.3 m @ VGS = 10 V RDS(ON) = 14.4 m @ VGS = 4.5 V
* Low gate charge (10 nC typical) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability.
Applications
* DC/DC converter * Power management * Load switch
D D D D SO-8
DD D D
5 6 7
4 3 2 1
Pin 1 SO-8
G SG S S SS S
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 20
(Note 1a)
Units
V V A W C
13 50 3.0 1.2 -55 to +175
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1b) (Note 1)
50 125 25
C/W
Package Marking and Ordering Information
Device Marking FDS6294 Device FDS6294 Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2003 Fairchild Semiconductor Corporation
FDS6294 Rev D(W)
FDS6294
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A
Min Typ
30 27
Max
Units
V mV/C
Off Characteristics
ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = 0 V VDS = 0 V
1 100
A nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 12 A VGS= 10 V, ID = 13 A, TJ=125C VGS = 10 V, VDS = 10 V, VDS = 5 V ID = 13 A
1
1.8 -5 9.4 11.5 13.5
3
V mV/C
11.3 14.4 16.5
m
ID(on) gFS
50 48
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
1205 323 102 0.9
pF pF pF
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
9 4 24 6
18 8 48 12 14
ns ns ns ns nC nC nC
VDS = 15 V, VGS = 5 V
ID = 13 A,
10 3.5 3
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.1 A (Note 2) Voltage Diode Reverse Recovery Time IF = 13 A, diF/dt = 100 A/s Diode Reverse Recovery Charge 2.1 0.74 25 14 1.2 A V nS nC
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
50C/W when mounted on a 1in2 pad of 2 oz copper
b) 125C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper
2 Test: Pulse Width < 300s, Duty Cycle < 2.0%
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FDS6294
Typical Characteristics
60 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 0
2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 6.0V 4.0V 4.5V 3.5.V 2 VGS = 3.5V 1.8 1.6 1.4 1.2 1 0.8
0.5 1 1.5 2 2.5
4.0V 4.5V 5.0V 6.0V 10V
3.0V
0
10
20
30
40
50
60
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.028 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 ID = 13A VGS = 10V
ID = 13A
0.024
0.02
0.016
TA = 125oC
0.012
0.008
TA = 25oC
0.004 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with Temperature.
70 60 ID, DRAIN CURRENT (A) 50 40 30 20 10 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
25 C 125o C
o
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
TA = -55oC
VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
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FDS6294
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 13A 8 VDS = 10V 15V
1500 CISS 1200 CAPACITANCE (pF)
20V
f = 1MHz VGS = 0 V
6
900
4
600 COSS 300 CRSS
2
0 0 5 10 Qg, GATE CHARGE (nC) 15 20
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
100s ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 10s DC
40
SINGLE PULSE RJA = 125C/W TA = 25C
30
1
20
0.1
VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC
10
0.01 0.01
0.1
1
10
100
0 0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 125 C/W
0.1
0.1 0.05 0.02
P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 0.1 t1, TIME (sec) 1 10 100 1000
0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6294 Rev D(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I5

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