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AO4450 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4450 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4450 is Pb-free (meets ROHS & Sony 259 specifications). AO4450L is a Green Product ordering option. AO4450 and AO4450L are electrically identical.
Features
VDS (V) = 40V ID = 6.6A (VGS = 10V) RDS(ON) <30m (VGS = 10V) RDS(ON) < 43m (VGS = 4.5V)
D S S S G D D D D
G S
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Maximum 40 20 6.6 5.2 20 2.5 1.6 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 38 69 24
Max 50 80 30
Units C/W C/W C/W
AO4450
N Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=250A, VGS=0V VDS=32V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=6.6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5.5A Forward Transconductance VDS=5V, ID=6.6A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 20 21.7 37 31.3 23 0.77 1 6.6 404 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 95 37 2.7 9.3 VGS=10V, VDS=20V, ID=6.6A 4.6 1.6 2.5 4.3 VGS=10V, VDS=20V, RL=3, RGEN=3 IF=6.6A, dI/dt=100A/s 3.4 15 2.8 21.2 15.8 43 30 2.3 Min 40 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=6.6A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 1 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30 10V 25 20 ID (A) 4.0V 15 10 VGS=3.5V 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 5 25C ID(A) 10 125C 5.0V 4.5V 15 20 VDS=5V
0 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 2 Normalized On-Resistance
40 35 RDS(ON) (m) 30 25 20 15 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V
1.8 1.6 1.4 1.2 1 0.8 0 25 50 75
VGS=10V ID=6.6A
VGS=4.5V ID=5.5A
VGS=10V
100
125
150
175
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01
80 ID=6.6A 60
1.0E+00 1.0E-01 125C
RDS(ON) (m)
125C 40
IS (A)
1.0E-02 1.0E-03 25C
20 25C 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10 8 VGS (Volts) 6 4 2 0 0 Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 6 8 10 0 0 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 10 40 VDS=40V ID= 6.6A Capacitance (pF) 600 Ciss 800
400 Coss Crss 200
100.0 RDS(ON) limited 10.0 ID (Amps) 10ms 1ms 1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10s DC 0.1s 100s 10s Power (W)
40 TJ(Max)=150C TA=25C
30
20
10
0 0.001
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.01
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton
Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
T 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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