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Datasheet File OCR Text: |
PROCESS Power Transistor CP319 Central TM NPN - Silicon Power Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 87 x 87 MILS 9.0 MILS 24 x 15 MILS 38 x 16 MILS Al - 30,000A Ti/Ni/Ag - 11,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 1,460 PRINCIPAL DEVICE TYPES CZTA44HC TIP47 TIP48 TIP50 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (21-September 2003) Central TM PROCESS CP319 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (21-September 2003) |
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