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| PROCESS Small Signal Transistor NPN - Amp/Switch Transistor Chip CP191 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 41,690 PRINCIPAL DEVICE TYPES 2N2219A 2N2222A CMPT2222A CMST2222A CXT2222A CZT2222A MD2219A PN2222A BACKSIDE COLLECTOR EPITAXIAL PLANAR 16.5 x 16.5 MILS 9.0 MILS 3.5 x 4.3 MILS 3.5 x 4.3 MILS Al - 30,000A Au - 18,000A 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002) Central TM PROCESS CP191 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1 -August 2002) |
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