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| ARF520 D G APT RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE * Specified 125 Volt, 81 MHz Characteristics: * Output Power = 150 Watts. * Gain = 13dB (Class AB) * Efficiency = 50% MAXIMUM RATINGS Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Device Dissipation @ TC = 25C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. S 165 V 150 W 100 MHz The ARF520 is an RF power transistor designed for high voltage operation in narrow band ISM and MRI power amplifiers up to 100 MHz. * High Voltage Breakdown and Large SOA for Superior Ruggedness. * Industry standard package * Low Vth thermal coefficient All Ratings: TC = 25C unless otherwise specified. ARF520 UNIT Volts Amps Volts Watts C 500 10 30 250 -55 to 200 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage 1 MIN TYP MAX UNIT Volts 500 4 25 250 100 4 3 6 5 (I D(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) A nA mhos Volts THERMAL CHARACTERISTICS Symbol RJC RCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT C/W 0.7 0.1 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 050-5930 Rev A 6-2003 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 50V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX ARF520 UNIT 800 140 9 5.1 4.1 12.8 4.0 1200 200 12 10 8 20 8 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic (Push-Pull Configuration) Test Conditions f = 81MHz Idq = 50mA VDD = 125V MIN TYP MAX UNIT dB % Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 5:1 13 50 14 55 Pout = 150W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. 24 22 20 GAIN (dB) 3000 Class AB VDD = 125V Pout = 150W CAPACITANCE (pf) Ciss 1000 500 Coss 100 50 18 16 14 12 10 Crss 50 75 100 125 150 FREQUENCY (MHz) Figure 1, Typical Gain vs. Frequency 25 10 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 0 12 10 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 40 TJ = -55C 100us OPERATION HERE LIMITED BY RDS (ON) 8 6 TJ = +25C 10 5 1ms 6-2003 4 10ms 050-5930 Rev A 2 0 0 TJ = +125C 1 2 3 4 5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics 1 .5 TC =+25C TJ =+200C SINGLE PULSE 100ms DC 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area ARF520 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 ID, DRAIN CURRENT (AMPERES) 25 VGS=15 & 10V 8V 15 6V 5.5V 5V 5 4.5V 4V 0 -25 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature 0.70 , THERMAL IMPEDANCE (C/W) D=0.5 0.2 0.10 0.05 0.1 0.05 0.02 0.01 0.005 0.01 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC Z JC 0.001 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration 10-4 10 Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 80 100 Zin () 24 - j 4.5 8.3 - j 11.6 2.5 - j 7.1 1.0 - j 4.2 .30 - j 1.1 .25 + j 0.3 .35 + j 1.6 ZOL () 55 - j 4 45 - j 22 28.7 - j 28 17.9 - j 26 9.0 - j 20.6 5.8 - j 17 4 - j 14.2 050-5930 Rev A 6-2003 Idq = 50mA Zin - Gate shunted with 25 ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 125V ARF520 L4 C12 R1 Bias 0 - 12V C8 C2 L1 TL1 DUT C1 C3 C4 C5 R2 R3 L2 C6 C7 L3 C9 +125V C10 C11 RF Output C1 - Arco 406 Mica trimmer C2 - 220pF Semco metal clad C3 - Arco 464 Mica trimmer C4 - 820 pF ATC 700B C5- 1000 pF ATC 700B C6 - Arco 463 Mica trimmer C7-C10 10nF 500V chip C11-C13 1nF NPO 500V TL1 - .23" x 1.5" stripline L1 -- 2t #18 .3" ID .2"L ~50nH L2 -- 3t #16 AWG .31" ID .3"L ~65nH L3 -- 10t #22 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R3 -- 1k Ohm 1/4W Carbon DUT = ARF520 RF Input C13 81.36 MHz Test Circuit Gate Bias Vdd Power ARF520 Test Fixture 4-17-02 rf HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domestic waste. .5" SOE Package Outine A U M 1 Q M 4 R B PIN 1. 2. 3. 4. SOURCE GATE SOURCE DRAIN 2 3 D K 6-2003 J H C E Seating Plane DIM A B C D E H J K M Q R U INCHES MILLIMETERS MIN MAX MIN MAX 0.960 0.990 24.39 25.14 0.465 0.510 11.82 12.95 0.229 0.275 5.82 6.98 0.216 0.235 5.49 5.96 0.084 0.110 2.14 2.79 0.144 0.178 3.66 4.52 0.003 0.007 0.08 0.17 0.435 11.0 45 NOM 45 NOM 0.115 0.130 2.93 3.30 0.246 0.255 6.25 6.47 0.720 0.730 18.29 18.54 Controlling Dimension: INCH. 050-5930 Rev A APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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