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APTM20UM05S
Single switch Series & parallel diodes MOSFET Power Module
SK CR1 D
VDSS = 200V RDSon = 5m max @ Tj = 25C ID = 317A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Low stray inductance - M6 power connectors - M4 signal connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance
S
Q1 G
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 200 317 237 1268 30 5 1136 89 50 2500 Unit V A V mW W A mJ
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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May, 2004
APTM20UM05S
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 500A
VGS = 0V,VDS= 200V VGS = 0V,VDS= 160V
Tj = 25C Tj = 125C
Min 200
Typ
Max 200 1000 5 5 200
Unit V A mW V nA
VGS = 10V, ID = 158.5A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 300A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 300A RG = 1.2W Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 300A, RG = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 300A, RG = 1.2 Min Typ 27.4 8.7 0.4 448 172 188 28 56 81 99 1852 1820 2432 2124 J J ns Max Unit nF
nC
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/s IF = 120A VR = 133V di/dt = 400A/s Min Tc = 85C Typ 120 1.1 1.4 0.9 31 60 120 500 Max 1.15 V
May, 2004 2-7 APTM20UM05S - Rev 1
Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
APT website - http://www.advancedpower.com
APTM20UM05S
Parallel diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt = 200A/s IF = 100A VR = 133V di/dt = 200A/s Min Tc = 90C Typ 100 1 1.4 0.9 60 110 200 840 Max 1.1 V Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Transistor Series diode Parallel diode 2500 -40 -40 -40 3 Min Typ Max 0.11 0.46 0.6 150 125 100 1.2 5 400 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M4 M6
APT website - http://www.advancedpower.com
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APTM20UM05S
Package outline
Mounting holes: 4xAE6.5 mm
APT website - http://www.advancedpower.com
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APTM20UM05S
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 Single Pulse
0 0.00001
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1000
VGS=15&10V 9V
800 ID, Drain Current (A)
Transfert Characteristics
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
ID, Drain Current (A)
800 600 400 200 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 1.15 1.1
VGS=10V
600
7.5V 7V 6.5V 6V 5.5V
400
TJ=25C TJ=125C T J=-55C
200
0 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 320 ID, DC Drain Current (A) 280 240 200 160 120 80 40 0 25 50 75 100 125 TC, Case Temperature (C) 150
May, 2004
Normalized to VGS=10V @ 158.5A
1.05 1 0.95 0.9 0 100 200 300 ID, Drain Current (A) 400
VGS=20V
APT website - http://www.advancedpower.com
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APTM20UM05S
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss ID, Drain Current (A) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area ON resistance vs Temperature
VGS=10V ID= 158.5A
10000
1000
limited by RDSon
100s 1ms 10ms
100
10 Single pulse TJ=150C 1 1
DC line
10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 12 VDS=40V ID=300A 10 TJ=25C V =100V
DS
8 6 4 2 0 0 100 200 300
VDS=160V
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
400
500
Gate Charge (nC)
May, 2004
APT website - http://www.advancedpower.com
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APTM20UM05S
Delay Times vs Current 90 80 td(on) and td(off) (ns) 70 60 50 40 30 20 10 50 150 250 350 450 550 ID, Drain Current (A) Switching Energy vs Current 5 4 3 2 1 0 50 150 250 350 450 550 ID, Drain Current (A) Operating Frequency vs Drain Current 300 Frequency (kHz) 250 200 150 100 50 0 30 70 110 150 190 230 ID, Drain Current (A) 270
VDS=133V D=50% RG=1.2 TJ=125C VDS=133V RG=1.2 TJ=125C L=100H
Rise and Fall times vs Current
160 140
td(off) tr and tf (ns)
120 100 80 60 40 20 0 50
VDS=133V RG=1.2 TJ=125C L=100H
tf
tr
td(on)
150
250
350
450
550
ID, Drain Current (A) Switching Energy vs Gate Resistance 6 Switching Energy (mJ) 5.5 5 4.5 4 3.5 3 2.5 2 0 2.5 5 7.5 10 12.5 15 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150C 100 TJ=25C
VDS=133V ID=300A TJ=125C L=100H
Eon and Eoff (mJ)
VDS=133V RG=1.2 TJ=125C L=100H
Eon Eoff
Eoff
Eon
IDR, Reverse Drain Current (A)
350
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V)
May, 2004
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTM20UM05S - Rev 1
APT reserves the right to change, without notice, the specifications and information contained herein

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