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| SI3458DV New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) 0.10 @ VGS = 10 V 0.13 @ VGS = 4.5 V ID (A) "3.2 "2.8 (1, 2, 5, 6) D TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (4) S N-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b 150 C) Pulsed Drain Current Single Avalanche Current Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IAS PD TJ, Tstg Symbol VDS VGS Limit "60 "20 "3.2 "2.5 "15 "10 2 Unit V A W 1.3 -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Lead Notes a. Surface Mounted on FR4 Board. b. t v 5 sec. Document Number: 70859 S-61517--Rev. B, 12-Apr-99 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJL Typical Maximum 62.5 Unit _C/W 106 35 2-1 SI3458DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 150_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 3.2 A VGS = 4.5 V, ID = 2.8 A VDS = 4.5 V, ID = 3.2 A 10 0.085 0.110 8 0.10 0.13 W S 60 V 1 "100 1 50 nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 30 W V, ID ^ 1 A, VGEN = 10 V RG = 6 W A V, VDS = 30 V, VGS = 10 V ID = 3 2 A V V, 3.2 8 4.0 2.0 10 10 20 10 20 20 ns 40 20 16 nC C Source-Drain Rating Characteristicsb Continuous Current Pulsed Current Diode Forward Voltagea Source-Drain Reverse Recovery Time IS ISM VSD trr IS = 1.7 A, VGS = 0 V IF = 1.7 A, di/dt = 100 A/ms 50 1.7 A 15 1.2 90 V ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70859 S-61517--Rev. B, 12-Apr-99 SI3458DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 15 VGS = 10 thru 5 V 12 I D - Drain Current (A) I D - Drain Current (A) 12 15 Vishay Siliconix Transfer Characteristics 9 4V 9 6 6 TC = 125_C 3 25_C 0 -55_C 3 3V 0 0 1 2 3 4 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.20 600 Capacitance r DS(on) - On-Resistance ( W ) 0.16 C - Capacitance (pF) VGS = 4.5 V 0.12 VGS = 10 V 0.08 500 Ciss 400 300 200 Coss Crss 0.04 100 0 0 3 6 9 12 15 0 0 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 30 V ID = 3.2 A Gate Charge 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.2 A r DS(on) - On-Resistance (W) (Normalized) 4 6 8 8 1.6 6 1.2 4 0.8 2 0 0 2 0.4 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70859 S-61517--Rev. B, 12-Apr-99 www.vishay.com S FaxBack 408-970-5600 2-3 SI3458DV Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.20 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 10 I S - Source Current (A) 0.16 TJ = 150_C 0.12 0.08 ID = 3.2 A 0.04 TJ = 25_C 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 20 25 Single Pulse Power 0.2 V GS(th) Variance (V) -0.0 Power (W) 15 -0.2 10 -0.4 5 -0.6 -0.8 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 106_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70859 S-61517--Rev. B, 12-Apr-99 |
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