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 RHK003N06
Transistors
4V Drive Nch MOS FET
RHK003N06
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)
SMT3
2.9 1.1 0.4
(3)
Features 1) Low On-resistance. 2) 4V drive.
0.8
(2)
(1)
1.6 2.8
0.95 0.95 0.15 1.9
Applications Switching
(1)Source (2)Gate (3)Drain Each lead has same dimensions Abbreviated symbol : RKS
Packaging specifications and hFE
Package Type RHK003N06 Code Basic ordering unit (pieces) Taping T146 3000
Inner circuit
(3)
0.3Min.
(2)
2
1 1 ESD PROTECTION DIODE (1) 2 BODY DIODE
(1) Source (2) Gate (3) Drain
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended land
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg
Limits 60 20 300 1.2 200 800 200 150 -55 to +150
Unit V V mA A mA mA mW C C
Thermal resistance
Parameter Channel to ambient
Each terminal mounted on a recommended land
Symbol Rth(ch-a)
Limits 625
Unit C/W
1/2
RHK003N06
Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate threshold voltage
Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd

Min. - 60 - 1.0 - - 0.2 - - - - - - - - - -
Typ.
- - - - 0.7 1.1 - 33 14 9 6 5 13 80 3 0.6 0.5
Max.
10 - 1 2.5 1.0 1.5 - - - - - - - - 6 - -
Unit A V A V S pF pF pF ns ns ns ns nC nC nC
Conditions
VGS=20V, VDS=0V ID= 1mA, VGS=0V VDS= 60V, VGS=0V VDS= 10V, ID= 1mA ID= 300mA, VGS= 10V ID= 300mA, VGS= 4V VDS= 10V, ID= 300mA VDS= 10V VGS=0V f=1MHz VDD 30V ID= 150mA VGS= 10V RL=200 RG=10 VDD 30V VGS= 10V ID= 300mA
Body diode characteristics (Source-drain) (Ta=25C)
Parameter
Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.2
Unit V
Conditions IS= 300mA, VGS=0V
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


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Newark

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RHK003N06FRAT146
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ROHM Semiconductor Mosfet, N-Ch, 60V, 0.3A, Smt-3; Transistor Polarity:N Channel; Continuous Drain Current Id:300Ma; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.7Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipationrohs Compliant: Yes |Rohm RHK003N06FRAT146 1000: USD0.147
500: USD0.185
250: USD0.224
100: USD0.262
50: USD0.303
25: USD0.343
10: USD0.384
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DigiKey

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RHK003N06FRAT146
846-RHK003N06FRAT146TR-ND
ROHM Semiconductor MOSFET N-CH 60V 300MA SMT3 75000: USD0.09847
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RHK003N06T146
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500: USD0.2121
100: USD0.2291
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RHK003N06FRAT146
846-RHK003N06FRAT146DKR-ND
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Avnet Americas

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RHK003N06FRAT146
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Mouser Electronics

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RHK003N06T146
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ROHM Semiconductor MOSFETs N-CH 60V 300MA 1: USD0.49
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1000: USD0.138
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Verical

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RHK003N06FRAT146
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TTI

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TME

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RHK003N06FRAT146
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ROHM Semiconductor Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 1.2A; 200mW; SMT3 3000: USD0.081
1000: USD0.089
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Ameya Holding Limited

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ROHM Semiconductor Trans MOSFET N-CH Si 60V 0.3A Automotive 3-Pin SMT T/R 500: USD0.167
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