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MJ10023
GENERAL DESCRIPTION
Silicon NPN Power Darlington Transistor
Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications.
TO-3
QUICK REFERENCE DATA
SYMBOL
VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time
CONDITIONS VBE = 0V
TYP
Tmb 25 IC = 20A; IB = 1.2A f = 16KHz IF = 20A IC=20A,IB1=1.2A,VCC=250V
-
MAX 600 400 40 80 250 6.0 5 1.0
UNIT V V A A W V A V s
LIMITING VALUES
SYMBOL
VCESM VCEO IC ICM IB IBM Ptot Tstg Tj
PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature
CONDITIONS VBE = 0V
Tmb 25
MIN -55 -
MAX 600 400 40 80 20 40 250 150 150
UNIT V V A A A A W
ELECTRICAL CHARACTERISTICS
SYMBOL
ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf
PARAMETER Collector cut-off current
Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 5MHz Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time
CONDITIONS VBE = 0V; VCE = VCEmax VBE = 0V; VCE = VCEmax Tj = 125 IB = 0A; IC = 100mA L = 25mH IC = 20A; IB = 1.2A IC = 20A; IB = 1.2A IC = 10A; VCE = 5V IF = 20A VCB = 10V IC=20A,IB1=1.2A,VCC=250V
IC=20A,IB1=1.2A,VCC=250V
TYP 300 2.5
MAX 2.0 5.0
UNIT mA mA V
6 3.5 5.0 600 3.0 1.0
V V V MHz pF s s
1.0 0.3
Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com

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Price & Availability of MJ10023

Part #	Manufacturer	Description	Price	BuyNow Qty.
MJ10023 10P1519	Solid State Devices Inc (SSDI)	Darlington Transistor, Npn, 400V, To-3; Transistor Polarity:Npn; No. Of Pins:2Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:400V Rohs Compliant: Yes \|Solid State MJ10023		0
MJ10023 29AH9870	SPC Multicomp	Trans, Npn, 400V, 40A, 200Deg C, 250W; Transistor Polarity:Npn; No. Of Pins:2Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:400V Rohs Compliant: Yes \|Multicomp Pro MJ10023		0
MJ10023 33C5062	NTE Electronics Inc	Bipolar Transistor, Npn, 400V, To-3; Transistor Polarity:Npn; No. Of Pins:2Pins; Transistor Mounting:Through Hole; Operating Temperature Max:200°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:400V Rohs Compliant: Yes \|Nte Electronics MJ10023		0

Part #	Manufacturer	Description	Price	BuyNow Qty.
MJ10023 2368-MJ10023-ND	NTE Electronics Inc	TRANS NPN DARL 400V 40A TO3	100: USD11.16 50: USD11.42 20: USD12.1 10: USD12.77 1: USD13.44	18

Part #	Manufacturer	Description	Price	BuyNow Qty.
MJ10023 70721891	NTE Electronics Inc.	TRANSISTOR NPN SILICON DARLINGTON 400V IC=40A TO-3 CASE WITH BASE EMITTER SPEED \| NTE Electronics Inc. MJ10023	1: USD13.11 50: USD12.85 100: USD12.45	1
MJ10023 70911212	Solid State Manufacturing	TO 3 40 Amp Darlington Transistors NPN \| Solid State Manufacturing MJ10023	10: USD8.3 50: USD7.89 100: USD7.47 200: USD7.06	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
MJ10023	Motorola Semiconductor Products	Bipolar Junction Transistor, Darlington, NPN Type, TO-204AE	7: USD12.66 3: USD13.293 1: USD14.2425	15
MJ10023	Motorola Semiconductor Products	Bipolar Junction Transistor, Darlington, NPN Type, TO-204AE	1: USD20.2558	1

Part #	Manufacturer	Description	Price	BuyNow Qty.
MJ10023	Motorola Semiconductor Products			1
MJ10023	MFG UPON REQUEST			3233

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