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| Composite Transistors XN0A311 (XN1A311) Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) For switching/digital circuits Features * Two elements incorporated into one package (Transistors with built-in resistor) * Reduction of the mounting area and assembly cost by one half 3 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 4 5 1.50+0.25 -0.05 2.8+0.2 -0.3 Unit: mm 0.16+0.10 -0.06 2 0.30+0.10 -0.05 1 (0.65) Basic Part Number of Element * UNR1211 (UN1211) + UNR1111 (UN1111) 10 1.1+0.2 -0.1 1.1+0.3 -0.1 Parameter Tr1 Collector to base voltage Collector to emitter voltage Collector current Tr2 Collector to base voltage Collector to emitter voltage Collector current Overall Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating 50 50 100 -50 -50 -100 300 150 -55 to +150 Unit V V mA V V mA mW C C Tr2 1: Collector (Tr1) Base (Tr2) 2: Collector (Tr2) EIAJ: SC-74A 0 to 0.1 Absolute Maximum Ratings Ta = 25C 3: Emitter (Tr2) 4: Base (Tr1) 5: Emitter (Tr1) Mini5-G1 Package Marking Symbol: FN Internal Connection 3 4 5 Tr1 Electrical Characteristics Ta = 25C 3C * Tr1 Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Symbol VCBO VCEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High-level output voltage Low-level output voltage Input resistance Resistance ratio Gain bandwidth product IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = 10 V, IE = -2 mA, f = 200 MHz Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k 2 1 Min 50 50 Typ Max Unit V V A mA 0.1 0.5 0.5 35 0.25 4.9 0.2 -30% 0.8 10 1.0 150 +30% 1.2 V V V k MHz Note) The part number in the parenthesis shows conventional part number. Publication date: July 2002 SJJ00234BED 0.40.2 5 1 XN0A311 Electrical Characteristics (continued) Ta = 25C 3C * Tr2 Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Symbol VCBO VCEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage High-level output voltage Low-level output voltage Input resistance Resistance ratio Gain bandwidth product IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = -10 V, IE = 1 mA, f = 200 MHz Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -10 V, IC = -5 mA IC = -10 mA, IB = - 0.3 mA VCC = -5 V, VB = - 0.5 V, RL = 1 k VCC = -5 V, VB = -2.5 V, RL = 1 k -30% 0.8 10 1.0 80 -4.9 - 0.2 +30% 1.2 MHz 35 - 0.25 V V V k Min -50 -50 - 0.1 - 0.5 - 0.5 mA Typ Max Unit V V A Common characterisitcs chart PT Ta 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Total power dissipation PT (mW) Ambient temperature Ta (C) Characterisitcs charts of Tr1 IC VCE 120 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) 1 IC / IB = 10 250 hFE IC VCE = 10 V 140 Ta = 25C Forward current transfer ratio hFE Collector current IC (mA) 200 Ta = 75C 25C 100 80 60 Ta = 75C 0.1 25C 150 -25C 100 0.2 mA 40 20 0.1 mA 0 0 2 4 6 8 10 12 -25C 50 0.01 1 10 100 1 000 0 1 10 100 1 000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 2 SJJ00234BED XN0A311 Cob VCB 10 IO VIN f = 1 MHz Ta = 25C 100 VO = 5 V Ta = 25C 10 VO = 0.2 V Ta = 25C VIN IO Collector output capacitance Cob (pF) Output current IO (mA) 1 1 Input voltage VIN (V) 1 1.2 1.4 1.6 1.8 2 10 1 0.1 0.1 0.01 0 5 10 15 20 25 30 35 0.1 0.1 1 10 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characterisitcs charts of Tr2 IC VCE Collector to emitter saturation voltage VCE(sat) (V) -140 -120 Ta = 25C VCE(sat) IC -10 -3 -1 Ta = 75C 25C -25C IC / IB = 10 140 120 100 - 0.9 mA - 0.8 mA - 0.7 mA - 0.6 mA - 0.5 mA - 0.4 mA - 0.3 mA - 0.2 mA hFE IC VCE = -10 V Ta = 75C IB = -1.0 mA -100 -80 -60 -40 -20 Forward current transfer ratio hFE Collector current IC (mA) - 0.3 - 0.1 - 0.03 - 0.01 25C 80 -25C 60 40 20 0 - 0.1 - 0.1 mA 0 0 -2 -4 -6 -8 -10 -12 - 0.003 - 0.001 -1 -3 -10 -30 -100 -300 -1 000 -1 -10 -100 -1 000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob VCB 100 IO VIN f = 1 MHz Ta = 25C -10 VO = -5 V Ta = 25C VIN IO -100 VO = - 0.2 V Ta = 25C Collector output capacitance Cob (pF) Output current IO (mA) Input voltage VIN (V) 10 -1 -10 1 - 0.1 -1 0.1 0 -5 -10 -15 -20 -25 -30 -35 - 0.01 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 - 0.1 - 0.1 -1 -10 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) SJJ00234BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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