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SML60S16
D3PAK Package Outline.
Dimensions in mm (inches)
4.98 (0.196) 5.08 (0.200) 1.47 (0.058) 1.57 (0.062) 15.95 (0.628) 16.05 (0.632) 13.41 (0.528) 13.51 (0.532)
1.04 (0.041) 1.15 (0.045)
13.79 (0.543) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 3 plcs. 1.22 (0.048) 1.32 (0.052) 1.98 (0.078) 2.08 (0.082) 5.45 (0.215) BSC 2 plcs.
11.51 (0.453) 11.61 (0.457)
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
1
2
3
1.27 (0.050) 1.40 (0.055) 3.81 (0.150) 4.06 (0.160)
2.67 (0.105) 2.84 (0.112)
VDSS 600V 16A ID(cont) W RDS(on) 0.400W
Pin 3 - Source
Pin 1 - Gate
Pin 2 - Drain Heatsink is Drain.
* * * *
Faster Switching Lower Leakage 100% Avalanche Tested Surface Mount D3PAK Package
D
StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.
G S
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate - Source Voltage Gate - Source Voltage Transient Total Power Dissipation @ Tcase = 25C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063" from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy
2
600 16 64 30 40 250 2 -55 to 150 300 16 30 960
V A A V W W/C C A mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25C, L = 7.5mH, RG = 25W, Peak IL = 16A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
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SML60S16
STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated)
BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate - Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain - Source On State Resistance 2 Test Conditions VGS = 0V , ID = 250mA VDS = VDSS VDS = 0.8VDSS , TC = 125C VGS = 30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] 2 16 0.40 Min. 600 Typ. Max. Unit V 25 250 100 4
mA
nA V A
W
DYNAMIC CHARACTERISTICS
Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate - Source Charge Gate - Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.6W Min. Typ. 2600 315 115 115 11 46 14 14 47 7 ns nC Max. Unit pF
SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS
IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions (Body Diode) (Body Diode) VGS = 0V , IS = - ID [Cont.] IS = - ID [Cont.] , dls / dt = 100A/ms IS = - ID [Cont.] , dls / dt = 100A/ms 370 5.2 Min. Typ. Max. Unit 16 A 64 1.3 V ns
mC
Max. Unit 0.50 C/W 40
THERMAL CHARACTERISTICS
RqJC RqJA Characteristic Junction to Case Junction to Ambient 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% 3) See MIL-STD-750 Method 3471 CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Min. Typ.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
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