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| Datasheet File OCR Text: |
| SEMICONDUCTOR TECHNICAL DATA LOW POWER RECTIFICATION FOR SWITCHING POWER SUPPLY. CATHODE MARK KDR412 SCHOTTKY BARRIER TYPE DIODE B 1 G FEATURES Small Surface Mounting Type. (USC) Low Forward Voltage : VF max=0.5V High Reliability K A H E 2 D J C I CONSTRUCTION Silicon epitaxial planar. DIM A B C M D M E F G H I J K L M MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6 MAXIMUM RATING (Ta=25 CHARACTERISTIC Peak Reverse Voltage DC Reverse Voltage Average Forward Current Peak Forward Surge Current Junction Temperature Storage Temperature Range ) SYMBOL VRM VR IO IFSM Tj Tstg RATING 40 20 0.5 3 125 -40 +125 UNIT V V A A 1. ANODE 2. CATHODE USC Marking Type Name U3 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance VF (1) VF (2) IR CT ) TEST CONDITION IF=10mA IF=500mA VR=10V VR=10V, f=1MHz MIN. TYP. 20 MAX. 0.3 0.5 30 UNIT V V A pF SYMBOL 2002. 10. 2 Revision No : 2 F L 1/2 KDR412 I F - VF 1 FORWARD CURRENT I F (A) REVERSE CURRENT I R (A) 10m Ta=125 C I R - VR 100m Ta =1 25 Ta C =7 5 C Ta =2 5 C Ta =-2 5 C 1m Ta=75 C 10m 100 1m 10 Ta=25 C 100 0 0.1 0.2 0.3 0.4 0.5 0.6 1 0 5 10 15 20 25 30 35 FORWARD VOLTAGE V F (V) REVERSE VOLTAGE V R (V) C T - VR 1K TOTAL CAPACITANCE C T (pF) Ta=25 C f=1MHz 100 10 1 0 10 20 30 40 REVERSE VOLTAGE VR (V) 2002. 10. 2 Revision No : 2 2/2 |
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