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| 2N5943 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. PACKAGE STYLE TO-39 MAXIMUM RATINGS IC VCE PDISS TJ TSTG JC 400 mA 30 V 1.0 W @ TA = 25 C O 3.5 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 125 C/W O O O O O O 1 = EMITTER 2 = BASE 3 = COLLECTOR CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICEO ICBO hFE VCE(SAT) VBE(SAT) ft Ccb Ceb hfe rb'Cc NF Gpe IM XM VCB = 30 V VCB = 0.5 V VCE = 15 V VCE = 15 V VCE = 15 V VCC = 15 V VCC = 15 V VCC = 15 V TC = 25 C O NONE TEST CONDITIONS IC = 5.0 mA IC = 100 A IE = 100 A VCE = 20 V VCB = 15 V VCE = 15 V IC = 100 mA IC = 100 mA VCE = 15 V MINIMUM 30 40 3.5 TYPICAL MAXIMUM UNITS V V V A A --V V MHz pF pF --pS dB dB dB dB f = 200 MHz f = 200 MHz f = 200 MHz f = 100 KHz f = 100 KHz IC = 50 mA f = 1.0 KHz IC = 50 mA f = 31.8 MHz IC = 50 mA f = 200 MHz IC = 50 mA f = 200 MHz IC = 50 mA Vout = +50 dbmV IC = 50 mA Vout = +50 dbmV IC = 50 mA IB = 10 mA IB = 10 mA IC = 25 mA IC = 50 mA IC = 100 mA 25 50 10 300 0.2 1.0 2400 3.5 15 350 20 8.0 -50 -45 1000 120 1000 1.0 25 2.0 7.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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