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| SI7942DP Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.049 @ VGS = 10 V 0.060 @ VGS = 6 V ID (A) 5.9 5.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr D Dual MOSFET for Space Savings Package APPLICATIONS D Synchronous Buck Shoot-Through Resistant D Optimized for Primary Side Switch PowerPAK SO-8 D1 D2 6.15 mm S1 1 2 G1 S2 5.15 mm 3 4 G2 D1 8 7 G1 D1 D2 G2 6 5 D2 Bottom View Ordering Information: SI7942DP-T1 S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C Conduction)a L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 100 "20 5.9 4.7 20 2.9 20 20 3.5 2.2 Steady State Unit V 3.8 3.0 A 1.2 mJ 1.4 0.9 W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72118 S-03373--Rev. A, 03-Mar-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 26 60 2.2 Maximum 35 85 2.7 Unit _C/W C/W 1 SI7942DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 5.9 A VGS = 6 V, ID = 5.5 A VDS = 15 V, ID = 5.9 A IS = 2.9 A, VGS = 0 V 20 0.041 0.048 14 0.77 1.2 0.049 0.060 2 4.0 "100 1 5 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resostamce Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 50 V, RL = 50 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS =50 V, VGS = 10 V, ID = 5.9 A 16 3.8 5.5 2.2 15 15 35 20 50 25 25 55 30 75 ns W 24 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10 thru 6 V 16 5V I D - Drain Current (A) 12 I D - Drain Current (A) 12 16 20 Transfer Characteristics 8 8 TC = 125_C 4 25_C -55_C 0 4 3V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 4V 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 72118 S-03373--Rev. A, 03-Mar-03 www.vishay.com 2 SI7942DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.08 r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 1500 Capacitance 0.06 VGS = 6 V C - Capacitance (pF) 1200 Ciss 900 0.04 VGS = 10 V 600 0.02 300 Coss Crss 0.00 0 4 8 12 16 20 0 0 10 20 30 40 50 60 70 80 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 50 V ID = 5.9 A 8 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 0 4 8 12 16 20 Qg - Total Gate Charge (nC) 0.6 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 5.9 A 6 4 2 r DS(on) - On-Resistance ( W) (Normalized) -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 0.12 0.10 0.08 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) I S - Source Current (A) ID = 5.9 A ID = 1 A 0.06 0.04 0.02 0.00 TJ = 25_C 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72118 S-03373--Rev. A, 03-Mar-03 www.vishay.com 3 SI7942DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 100 Single Pulse Power 0.4 V GS(th) Variance (V) 80 ID = 250 mA Power (W) 60 0.0 -0.4 40 -0.8 20 -1.2 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 Safe Operating Area, Junction-To-Ambient rDS(on) Limited IDM Limited 10 I D - Drain Current (A) P(t) = 0.0001 1 P(t) = 0.001 ID(on) Limited TA = 25_C Single Pulse P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 0.01 0.1 1 BVDSS Limited 10 VDS - Drain-to-Source Voltage (V) dc 100 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 60_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72118 S-03373--Rev. A, 03-Mar-03 SI7942DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse Normalized Effective Transient Thermal Impedance 0.01 10 - 4 10 - 3 10 - 2 Square Wave Pulse Duration (sec) 10 - 1 1 Document Number: 72118 S-03373--Rev. A, 03-Mar-03 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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