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| Semiconductor STK1828UF N-Channel Enhancement-Mode MOSFET Description * High speed switching application. * Analog switch application. Features * 2.5V Gate drive. * Low threshold voltage : Vth = 0.5~1.5V. * High speed. Ordering Information Type NO. STK1828UF Marking K28 Package Code SOT-323F Outline Dimensions unit : mm 2.10.1 1.300.1 0.30~0.40 0.70-0.15 +0.1 1 1.30 BSC 2.00.1 3 2 0.110.05 PIN Connections 1. Gate 2. Source 3. Drain KST-3058-000 0~0.1 1 STK1828UF Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Drain Power dissipation Channel temperature Storage temperature range (Ta=25C) Symbol VDS VGSS ID PD Tch Tstg Ratings 20 10 50 200 150 -55~150 Unit V V mA mW C C Electrical Characteristics Characteristic Drain-Source breakdown voltage Gate-Threshold voltage Drain cut-off current Gate leakage current Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse Transfer capacitance Turn-on time Turn-off time u (Ta=25C) Symbol BVDSS Vth IDSS IGSS RDS(ON) Yfsu Ciss Coss Crss tON tOFF Test Condition ID=100A, VGS=0 ID=0.1mA, VDS=3V VDS=20V, VGS=0 VGS=10V, VDS=0 VGS=2.5V, ID=10mA VDS=3V, ID=10mA VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDS=3V, VGS=0, f=1MHz VDD=3V, ID=10mA VGEN=0~2.5V VDD=3V, ID=10mA VGEN=0~2.5V Min. Typ. Max. 20 0.5 1.5 1 1 10 20 5.5 6.5 1.6 0.14 0.14 20 Unit V V A A mS pF pF pF A A KST-3058-000 2 STK1828UF Electrical Characteristic Curves Fig.1 ID - VDS Fig.2 PD - Ta E Fig.3 IDR - VDS Fig.4 ID - VGS E 155E - E E Fig.5 | Yfs| - ID Fig.6 C - VDS E E | | KST-3058-000 3 Electrical Characteristic Curves Fig.7 VDS - ID Fig.8 t - ID STK1828UF E U E KST-3058-000 4 |
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