|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
SI4834BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V ID (A) 7.5 6.5 FEATURES D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) 30 APPLICATIONS D Symmetrical Buck-Boost DC/DC Converter IF (A) 2.0 VSD (v) Diode Forward Voltage 0.50 V @ 1.0 A D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 Ordering Information: SI4834BDY--E3 (Lead Free) SI4834BDY-T1--E3 (Lead Free with Tape and Reel) N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 Schottky Diode G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 7.5 6.0 30 1.7 2.0 1.3 -55 to 150 Steady State Unit V 5.7 4.6 0.9 1.1 0.7 W _C A Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS MOSFET Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72064 S-32621--Rev. C, 29-Dec-03 www.vishay.com t v 10 sec Steady-State Steady-State Schottky Typ 53 93 35 Symbol RthJA RthJF Typ 52 93 35 Max 62.5 110 40 Max 62.5 110 40 Unit _C/W C/W 1 SI4834BDY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V TJ = 85_C V V, On-State Drain Currentb Drain-Source On-State Drain Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) rDS( ) DS(on) gfs VSD VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 7.5 A VGS = 4.5 V, ID = 6.5 A VDS = 15 V, ID = 7.5 A IS = 1 A VGS = 0 V A, Ch-1 Ch-2 Ch-1 Ch-2 Ch-1 Ch-2 20 0.017 0.024 19 0.47 0.75 0.5 1.2 0.022 0.030 0.8 3.0 "100 100 1 2000 15 A W S V mA V nA Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Source Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1 7 A di/dt = 100 A/ms 1.7 A, Ch-1 Ch-2 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.5 VDS = 15 V VGS = 4 5 V ID = 7 5 A V, 4.5 V, 7.5 7 2.9 2.5 1.5 9 10 19 9 32 35 2.6 15 17 30 15 55 55 ns W 11 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 30 V Vr = 30 V, TJ = 100_C Vr = -30 V, TJ = 125_C Vr = 10 V Min Typ 0.47 0.36 0.004 0.7 3.0 50 Max 0.50 0.42 0.100 10 20 Unit V Maximum Reverse Leakage Current g Junction Capacitance Irm CT mA pF www.vishay.com 2 Document Number: 72064 S-32621--Rev. C, 29-Dec-03 SI4834BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 25 I D - Drain Current (A) 20 15 10 5 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) I D - Drain Current (A) VGS = 10 thru 5 V 30 4V 25 20 15 10 5 MOSFET Transfer Characteristics TC = 125_C 25_C -55_C On-Resistance vs. Drain Current 0.040 r DS(on) - On-Resistance ( W ) 1200 Capacitance 0.030 VGS = 4.5 V 0.020 VGS = 10 V C - Capacitance (pF) 960 Ciss 720 480 Coss 240 Crss 0.010 0.000 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.5 A 8 r DS(on) - On-Resistance (Normalized) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.5 A 6 4 2 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) Document Number: 72064 S-32621--Rev. C, 29-Dec-03 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 SI4834BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.06 0.05 0.04 ID = 7.5 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) MOSFET On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 1 TJ = 25_C 0.1 0.0 Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA -0.0 -0.2 -0.4 -0.6 -0.8 -50 20 Power (W) 60 100 Single Pulse Power, Junction-to-Ambient 80 40 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 Time (sec) 1 10 TJ - Temperature (_C) 100 Safe Operating Area, Junction-to-Foot Limited by rDS(on) 1 ms 10 I D - Drain Current (A) 1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com Document Number: 72064 S-32621--Rev. C, 29-Dec-03 4 SI4834BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 MOSFET Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 93_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72064 S-32621--Rev. C, 29-Dec-03 www.vishay.com 5 SI4834BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 20 10 I R - Reverse Current (mA) SCHOTTKY Forward Voltage Drop 10 TJ = 150_C Reverse Current vs. Junction Temperature 0.1 30 V 24 V I F - Forward Current (A) 1 TJ = 25_C 0.01 0.001 0.0001 0 25 50 75 100 125 150 TJ - Temperature (_C) 200 1 0.0 0.3 0.6 0.9 1.2 1.5 VF - Forward Voltage Drop (V) Capacitance 160 C - Capacitance (pF) 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) www.vishay.com 6 Document Number: 72064 S-32621--Rev. C, 29-Dec-03 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
Price & Availability of SI4834BDY |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |