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| Switching Diodes MA3X153, MA3X153A Silicon epitaxial planar type For switching circuits I Features * Small terminal capacitance, Ct * Two diodes are connected in series in the package 2.8 - 0.3 0.65 0.15 1.5 + 0.2 Unit : mm 0.65 0.15 + 0.25 - 0.05 0.95 1.9 0.2 2.9 - 0.05 1 3 2 + 0.2 0.95 1.45 0 to 0.1 Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current MA3X153 MA3X153A MA3X153 MA3X153A Single Series Single Series VR VRM IF IFM Tj Tstg 40 80 40 80 100 65 200 130 150 -55 to +150 V 0.1 to 0.3 0.4 0.2 V mA mA C C Junction temperature Storage temperature Marking Symbol * MA3X153 : MC * MA3X153A : MP Internal Connection 1 3 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) MA3X153 MA3X153A Forward voltage (DC) Reverse voltage (DC) MA3X153 MA3X153A Terminal capacitance Reverse recovery time Ct trr *1 Symbol IR VF VR VR = 40 V VR = 75 V IF = 100 mA IR = 100 A Conditions Min 0.8 Parameter Symbol Rating Unit 1.1 - 0.1 1 : Anode 1 2 : Cathode 2 3 : Anode 2 JEDEC : TO-236 Cathode 1 EIAJ : SC-59 Mini Type Package (3-pin) Typ Max 0.1 0.1 1.2 0.16 - 0.06 + 0.2 + 0.1 I Absolute Maximum Ratings Ta = 25C 0.4 - 0.05 + 0.1 Unit A V V 40 80 VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 150 9 5 pF ns ns trr1*2 Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 2 and 3 *2 : Between pins 1 and 3 1 MA3X153, MA3X153A IF V F 103 D1 (1-3) Switching Diodes IF V F Ta = 25C 103 D2 (3-2) IR V R D2 (3-2) D1 (1-3) 102 Ta = 125C Ta = 25C D1 (1-3) 103 3 102 Forward current IF (mA) Forward current IF (mA) 102 1 3 2 Reverse current IR (A) 1 2 D2 (3-2) 10 10 10 D1 (1-3) 1 3 D2 (3-2) 2 1 1 1 10-1 10-1 10-1 D1 (1-3) Ta = 25C 0 0.2 0.4 0.6 0.8 1.0 1.2 10-2 0 10 20 30 D2 (3-2) 40 50 10-2 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) Forward voltage VF (V) Reverse voltage VR (V) IR VR 1.0 D1 (1-3) 10 D2 (3-2) 1 3 VF Ta 1.0 VF Ta Ta = 125C 0.8 0.8 Reverse current IR (A) Forward voltage VF (V) IF = 10 mA 0.6 3 mA 1 mA 0.4 3 D1 (1-3) Forward voltage VF (V) IF = 10 mA 3 mA 1 mA 3 0.6 10-1 D1 (1-3) 1 2 D2 (3-2) 0.1 mA D2 (3-2) 0.4 1 2 10-2 Ta = 25C 10-3 0 20 40 60 D1 (1-3) D2 (3-2) 0.1 mA 0.2 1 2 0.2 80 100 0 -40 0 40 80 120 160 0 -40 0 40 80 120 160 Reverse voltage VR (V) Ambient temperature Ta (C) Ambient temperature Ta (C) IR Ta 102 3 D1 (1-3) 10 D2 (3-2) 1 2 VR = 80 V 80 V 40 V 10-1 D2 (3-2) 40 V 3 D1 (1-3) IR T a 103 VR = 40 V D1 (1-3) D2 (3-2) 1 2 Ct VR f = 1 MHz Ta = 25C 5 Terminal capacitance Ct (pF) 102 Reverse current IR (nA) Reverse current IR (A) 3 2 D1 (1-3) 1 3 D2 (3-2) 2 1 D1 (1-3) 10 D2 (3-2) 1 1 D2 (3-2) 0.5 0.3 0.2 D1 (1-3) 10-2 10-1 10-3 -40 10-2 0 40 80 120 -40 0 40 80 120 0.1 0 10 20 30 40 50 Ambient temperature Ta (C) Ambient temperature Ta (C) Reverse voltage VR (V) 2 |
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