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| Composite Transistors XP0431N Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 0.425 1.250.1 0.425 0.20.05 For switching/digital circuits 0.65 2.10.1 0.65 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.00.1 s Features 1 2 3 6 5 4 0.2 0.90.1 s Basic Part Number of Element q 0.70.1 UN221N+UN211N 0 to 0.1 0.20.1 s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 100 -50 -50 -100 150 150 -55 to +150 Unit V V mA V V mA mW C 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC-88 S-Mini Type Package (6-pin) Marking Symbol: HC Internal Connection 1 2 3 Tr1 6 5 4 C Tr2 0.12 -0.02 +0.05 1 Composite Transistors XP0431N (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = 10V, IE = -2mA, f = 200MHz Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k -30% 0.08 4.7 0.1 150 4.9 0.2 +30% 0.12 MHz 80 0.3 V V V k min 50 50 0.1 0.5 2 typ max Unit V V A A mA s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency q Tr2 Parameter Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = -10V, IE = 2mA, f = 200MHz Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -6V, IC = 0 VCE = -10V, IC = -5mA IC = -10mA, IB = - 0.3mA VCC = -5V, VB = - 0.5V, RL = 1k VCC = -5V, VB = -2.5V, RL = 1k -30% 0.08 4.7 0.1 150 -4.9 - 0.2 +30% 0.12 MHz 80 - 0.3 V V V k min -50 -50 - 0.1 - 0.5 -2 typ max Unit V V A A mA Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency 2 Composite Transistors Common characteristics chart PT -- Ta 250 XP0431N Total power dissipation PT (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Characteristics charts of Tr1 IC -- VCE 160 Ta=25C 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 10 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 480 hFE -- IC VCE=10V Forward current transfer ratio hFE 400 Ta=75C Collector current IC (mA) 120 100 80 60 40 1 320 25C 240 0.1 25C Ta=75C 160 -25C 0.1mA 20 0 0 2 4 6 8 10 12 80 -25C 0.01 1 10 100 1000 0 1 10 100 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 VO=5V Ta=25C 100 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 3 100 Input voltage VIN (V) 0.6 0.8 1 1.2 1.4 1000 10 1 2 10 0.1 1 0 1 10 100 1 0.4 0.01 0.1 1 10 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 3 Composite Transistors Characteristics charts of Tr2 IC -- VCE -200 Ta=25C -175 -10 XP0431N VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 300 hFE -- IC VCE= -10V Forward current transfer ratio hFE 250 Ta=75C 200 25C 150 Collector current IC (mA) -150 -125 -100 -75 -50 -25 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA -1 Ta=75C -0.1 25C -25C -25C 100 50 0 0 -2 -4 -6 -8 -10 -12 -0.01 -1 -10 -100 -1000 0 -1 -10 -100 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 VO=-5V Ta=25C -100 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 3 -100 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -1 2 -10 -0.1 1 0 -1 -10 -100 -1 -0.4 -0.01 -0.1 -1 -10 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 4 |
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