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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. KTC3541T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall Package facilitates miniaturization in end products. High Allowable Power Dissipation. Complementary to KTA1541T. C L G High Speed Switching. 1 E F G H I J K L J CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 RATING 40 30 5 1.5 3 300 0.9 150 -55 ) 150 UNIT V V V A mA W 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=30V, IE=0 VEB=4V, IC=0 IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 IC=750mA, IB=15mA IC=750mA, IB=15mA VCE=2V, IC=100mA VCE=10V, IC=300mA VCB=10V, f=1MHz PW=20s DC < 1% = IB1 I B2 RB 50 VR 100F 470F VCC =12V 24 OUTPUT MIN. 40 30 5 200 - Storage Time tstg Fall Time tf V BE =-5V 20IB1=-20IB2=IC =500mA 2001. 6. 30 Revision No : 0 I J MAXIMUM RATING (Ta=25 ) H TSM HF TYP. 150 0.85 450 20 35 MAX. 0.1 0.1 225 1.2 560 MHz pF UNIT A A V V V mV V - 205 - nS - 30 - 1/3 KTC3541T I C - V CE 50m A m A h FE - I C 2K 20mA 2.0 COLLECTOR CURRENT I C (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.1 0.2 30m 40 A DC CURRENT GAIN h FE 1K 500 300 100 50 30 10 0.01 VCE =2V 10mA 8mA 6mA 4mA 2mA Ta=75 C Ta=25 C Ta=-25 C IB=0mA 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.03 0.1 0.3 1 3 COLLECTOR-EMITTER VOLTAGE VCE (mV) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) I C /I B =20 VCE(sat) - I C 1 0.5 0.3 I C /I B =50 0.1 0.05 0.03 = Ta C 5 =2 Ta 75 C = Ta -25 C 0.1 0.05 0.03 7 Ta= 5C Ta= 25 C Ta 5 =-2 C 0.01 0.01 0.03 0.1 0.3 1 3 0.01 0.01 0.03 0.1 0.3 1 3 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 5 3 COLLECTOR CURRENT IC (A) I C /I B =50 I C - V BE 1.6 1.4 1.2 1.0 Ta=75 C Ta=25 C Ta=-2 5C VCE =2V 1 0.5 0.3 Ta=-25 C 0.8 0.6 0.4 0.2 0 0 0.2 0.4 Ta=25 C Ta=75 C 0.1 0.01 0.03 0.1 0.3 1 3 0.6 0.8 1.0 1.2 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE V BE (V) 2001. 6. 30 Revision No : 0 2/3 KTC3541T f T - IC TRANSITION FREQUENCY f T (MHz) 1K 500 300 COLLECTOR OUTPUT CAPACITANCE C ob (pF) 100 50 30 C ob - V CB f=1MHz 100 50 10 5 3 0.1 0.3 1 3 10 30 COLLECTOR-BASE VOLTAGE VCB (V) VCE =10V 30 0.01 0.03 0.1 0.3 1 COLLECTOR CURRENT I C (A) SAFE OPERATING AREA 3 COLLECTOR CURRENT I C (A) 1 0.5 0.3 I C MAX.(PULSED) 10 S 0 Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) 5 I C MAX (CONTINUOUS) DC OP ER 10 1m m S* 50 S* * S 0 * 10 0m S* N AT IO 0.1 0.05 0.03 0.01 0.1 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) AMBIENT TEMPERATURE Ta ( C) 10 30 50 0.3 0.5 1 3 5 COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 6. 30 Revision No : 0 3/3 |
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