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| UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Total Power Dissipation(Ta=25C) Collector current Junction Temperature Storage Temperature Base Current SYMBOL VCBO VCEO VEBO Pc Ic Tj TSTG IB RATING 60 60 7 30 3 150 -55 ~ +150 0.5 UNIT V V V W A C C A ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage Collector-emitter on voltage DC current gain Current gain bandwidth product SYMBOL BVCEO ICBO IEBO VCE(SAT) VCE(ON) hFE1 hFE2 fT TEST CONDITIONS Ic=50mA VCB=60V VEB=7V IC=3A,IB=0.3A VCE=5V,IC=0.5A IC=0.5A,VCE=5V IC=3A,VCE=5V VCE=5V,IC=0.5A MIN 60 TYP MAX 100 100 1 1 300 UNIT V A A V V 0.7 60 20 9 MHZ CLASSIFICATION of hFE1 RANK RANGE O 60-120 Y 100-200 GR 150-300 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R203-014,A |
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