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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAS56 High-speed double diode Product specification Supersedes data of April 1996 1996 Sep 10 Philips Semiconductors Product specification High-speed double diode FEATURES * Small plastic SMD package * High switching speed: max. 6 ns * Continuous reverse voltage: max. 60 V * Repetitive peak reverse voltage: max. 60 V * Repetitive peak forward current: max. 600 mA. APPLICATIONS * High speed switching in e.g. surface mounted circuits. 1 1 Top view Marking code: L51. BAS56 PINNING PIN 1 2 3 4 DESCRIPTION cathode (k1) cathode (k2) anode (a2) anode (a1) DESCRIPTION The BAS56 consists of two highspeed switching diodes fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT143 package. The diodes are not connected. handbook, halfpage 4 3 4 3 2 2 MAM059 Fig.1 Simplified outline (SOT143) and symbol. 1996 Sep 10 2 Philips Semiconductors Product specification High-speed double diode LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRRM VR VR IF PARAMETER repetitive peak reverse voltage repetitive peak reverse voltage continuous reverse voltage continuous reverse voltage continuous forward current series connection single diode loaded; see Fig.2; note 1 double diode loaded; see Fig.2; note 1 IFRM IFSM repetitive peak forward current non-repetitive peak forward current single diode loaded double diode loaded square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 100 s t = 10 ms Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 - - - - -65 - 9 3 series connection - - - - - - CONDITIONS MIN. - MAX. 60 120 60 120 200 150 600 430 BAS56 UNIT V V V V mA mA mA mA A A A mW C C 1.7 250 +150 150 1996 Sep 10 3 Philips Semiconductors Product specification High-speed double diode ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS see Fig.3; IF = 200 mA; DC value; note 1 see Fig.5 VR = 60 V VR = 60 V; Tj = 150 C IR reverse current series connection VR = 120 V VR = 120 V; Tj = 150 C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 400 mA to IR = 400 mA; RL = 100 ; measured at IR = 40 mA; see Fig.7 when switched from IF = 400 mA; tr = 30 ns; see Fig.8 when switched from IF = 400 mA; tr = 100 ns; see Fig.8 Note - - - - - - - 100 100 2.5 6 100 100 MIN. - MAX. 1.0 BAS56 UNIT V nA A nA A pF ns Vfr forward recovery voltage - - 2.0 1.5 V V 1. Tamb = 25 C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 360 500 UNIT K/W K/W 1996 Sep 10 4 Philips Semiconductors Product specification High-speed double diode GRAPHICAL DATA BAS56 handbook, halfpage 300 MBG439 handbook, halfpage 300 MBH279 IF (mA) 200 (1) IF (mA) 200 100 (2) 100 0 0 100 Tamb (oC) 200 0 0 1 VF (V) 2 Device mounted on a FR4 printed-circuit board. (1) Single diode loaded. (2) Double diode loaded. Tj = 25 C. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage; typical values. 102 handbook, full pagewidth IFSM (A) MBG703 10 1 10-1 1 Based on square wave currents. Tj = 25 C prior to surge. 10 102 103 tp (s) 104 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 10 5 Philips Semiconductors Product specification High-speed double diode BAS56 102 handbook, halfpage IR (A) 10 MBH282 handbook, halfpage 2.0 MBH283 Cd (pF) 1.5 1 (1) (2) 1.0 10-1 0.5 10-2 0 100 Tj (oC) 200 0 0 10 20 VR (V) 30 (1) VR = 60 V; maximum values. (2) VR = 60 V; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 10 6 Philips Semiconductors Product specification High-speed double diode BAS56 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 40 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 I 90% V R S = 50 D.U.T. OSCILLOSCOPE R i = 50 10% MGA882 V fr t tr tp t input signal output signal Input signal: forward pulse duration tp = 300 ns; duty factor = 0.01. Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 10 7 Philips Semiconductors Product specification High-speed double diode PACKAGE OUTLINE BAS56 handbook, full pagewidth 0.75 0.60 0.150 0.090 4 0.1 max 10 max o 3.0 2.8 1.9 3 B A 0.2 M A B 10 max o 1.4 1.2 2.5 max 1 1.1 max o 2 0.1 M A B 30 max 0.88 0 0.1 1.7 0.48 0 0.1 MBC845 TOP VIEW Dimensions in mm. Fig.9 SOT143. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 10 8 |
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