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Datasheet File OCR Text: |
SOT23 NPN SILICON PLANAR DARLINGTON TRANSISTORS ISSUE 3 SEPTEMBER 1995 7 FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPES BCV27 BCV28 BCV47 BCV48 PARTMARKING DETAILS BCV27 ZFF BCV47 ZFG SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg BCV47 MIN. MAX. 80 60 10 100 10 IEBO VCE(sat) VBE(sat) hFE 100 1.0 1.5 4K 10K 20K 4K 170 Typical 3.5 Typical 100 10 100 1.0 1.5 2K 4K 10K 2K 170 Typical 3.5 Typical BCV27 40 30 10 800 500 100 330 -55 to +150 UNIT V V V nA nA nA V V BCV27 BCV47 C B SOT23 BCV47 80 60 UNIT V V V mA mA mA mW C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance V(BR)CBO V(BR)CEO V(BR)EBO ICBO BCV27 MIN. MAX. 40 30 10 CONDITIONS. IC=100A IC=10mA* IE=10A VCB = 30V VCB = 60V VCB=30V,Tamb =150oC VCB=60V,Tamb =150oC VEB=4V IC=100mA,IB=0.1mA* IC=100mA,IB=0.1mA* IC=100A, VCE=1V IC=10mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* IC=50mA, VCE=5V f = 20MHz VCB=10V, f=1MHz A A fT Cobo MHz pF *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Periodic Sample Test Only. For typical graphs see FMMT38A datasheet 3 - 22 |
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