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| 2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (-MOS V) 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications * * * * Low drain-source ON-resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -200 V) Enhancement model: Vth = -1.5 ~ -3.5 V (VDS = -10 V, ID = -1 mA) Unit: mm MAX MAX Maximum Ratings (Ta = 25C) MAX 1 MAX Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating -200 -200 20 -2.5 -10 20 97.5 -2.5 2.0 150 -55~150 Unit V V V A W mJ A mJ C C JEDEC JEITA TOSHIBA 2-7J2B Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.36 g (typ.) Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C/W C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = -50 V, Tch = 25C (initial), L = -25.2 mH, IAR = -2.5 A RG = 25 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2004-12-24 2SJ680 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd 0V VGS -10 V 50 ID = -1.5 A VOUT VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -200 V, VGS = 0 V ID = -10 mA, VGS = 0 V VDS = -10 V, ID = -1 mA VGS = -10 V, ID = -1.5 A VDS = -10 V, ID = -1.5 A Min -200 -1.5 1.0 Typ. 1.6 2.0 410 40 145 20 Max 10 -100 -3.5 2.0 pF Unit A A V V S RL = 66.7 VDD -100 V - ns Turn-on time Switching time Fall time 45 15 nC Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge Duty < 1%, tw = 10 s = 85 10 6 4 VDD -160 V, VGS = -10 V, - ID = -2.5 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = -2.5 A, VGS = 0 V IDR = -2.5 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 135 0.81 Max -2.5 -10 2.0 Unit A A V ns C Marking J680 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-12-24 2SJ680 ID - VDS -2.0 Common source Tc = 25C pulse test -15 -10 -8 -6 -5 -4.8 -5 -10 -4 -15 -6 -8 ID - VDS Common source Tc = 25C, pulse test -5.75 -1.6 (A) (A) -4.6 -5.5 -5.25 -5 ID -1.2 ID Drain current -4.4 -4.2 VGS = -4 V -3 Drain current -0.8 -2 -4.8 -4.6 -4.4 -0.4 -1 -4.2 VGS = -4 V 0 0 -1 -2 -3 -4 -5 0 0 -10 -20 -30 -40 -50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -10 Common source -8 VDS = -10 V pulse test Tc = -55C -10 VDS - VGS Common source (V) -8 Tc = 25C pulse test (A) ID Drain-source voltage -6 VDS 25 -6 Drain current -4 100 -4 ID = -2.5 A -1.5 -2 -0.8 -2 0 0 -2 -4 -6 -8 -10 0 0 -4 -8 -12 -16 -20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 10 Common source 10 Common source Tc = 25C pulse test 25 100 VDS = -10 V pulse test RDS (ON) - ID (S) Forward transfer admittance Yfs Drain-source ON-resistance RDS (ON) () Tc = -55C VGS = -10 V -15 1 1 0.1 -0.1 -1 -10 0.1 -0.1 -1 -10 Drain current ID (A) Drain current ID (A) 3 2004-12-24 2SJ680 RDS (ON) - Tc 6 Common source VGS = -10 V pulse test ID = -1.5 A -10 Common source Tc = 25C pulse test IDR - VDS 4 -1.2 Drain reverse current IDR (A) 5 Drain-source ON-resistance RDS (ON) () 3 -1.0 -1 2 1 -5 0 -80 -40 0 40 80 120 160 -0.1 0 0.2 -3 0.4 -1 0.6 VGS = 0 V 0.8 1 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 1000 Ciss 5 Vth - Tc Common source Vth (V) 4 VDS = 10 V ID = 1 mA pulse test (pF) Gate threshold voltage 100 Coss 3 Capacitance C 2 10 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 -0.1 -1 -10 Crss 1 0 -80 -100 -40 0 40 80 120 160 Case temperature Tc (C) Drain-source voltage VDS (V) PD - Tc 40 -160 Dynamic input/output characteristics VDS VDS = -40 V -120 -180 -80 -80 -40 VGS -4 Common source ID = -2.5 A Tc = 25C pulse test -8 -12 -16 (W) PD VDS Drain power dissipation Drain-source voltage 20 10 0 0 40 80 120 160 0 0 4 8 12 16 20 Case temperature Tc (C) Total gate charge Qg (nC) 4 2004-12-24 Gate-source voltage VGS 30 (V) (V) 2SJ680 rth - tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.001 10 Duty = 0.5 0.2 0.1 0.05 0.02 Single pulse PDM t 0.01 T Duty = t/T Rth (ch-c) = 6.25C/W 100 1m 10 m 100 m 1 10 100 Pulse width tw (S) Safe operating area -30 -10 -5 -3 ID max (pulse) * 100 s* 100 EAS - Tch (mJ) EAS Avalanche energy 1 ms* DC operation * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. -0.3 -1 -3 -10 -30 -100 -300 VDSS max 80 (A) 60 ID Drain current -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.005 -0.1 40 20 0 25 50 75 100 125 150 Channel temperature Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Waveform AS = 1 B VDSS L I2 B 2 - VDD VDSS Test circuit RG = 25 VDD = -50 V, L = 25.2 mH 5 2004-12-24 |
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