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SEMiX 151GD126HDs
Absolute Maximum Ratings Symbol Conditions IGBT Values Units
SEMiX(R) 13s Trench IGBT Modules
SEMiX 151GD126HDs
Inverse diode
Characteristics Symbol Conditions IGBT
min.
typ.
max.
Units
Target Data
Features
Typical Applications
Inverse diode
Thermal characteristics
Temperature sensor
Mechanical data
GD
1
28-06-2005 GES
(c) by SEMIKRON
SEMiX 151GD126HDs
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
2
28-06-2005 GES
(c) by SEMIKRON

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Price & Availability of SEMIX151GD126HDS

Part #	Manufacturer	Description	Price	BuyNow Qty.
SEMIX151GD126HDS 16M0096	SEMIKRON	Igbt Module, Six, 1.2Kv, 168A; Continuous Collector Current:168A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX151GD126HDS	25: USD159.76 10: USD169.52 5: USD171.96 1: USD174.4	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
SEMIX151GD126HDS 27890731 SEMIX151GD126HDS	SEMIKRON	Module: IGBT; transistor/transistor; IGBT three-phase bridge	16: USD467.77 8: USD504.58 4: USD540.31 2: USD600.95 1: USD684.32	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
SEMIX151GD126HDS SEMIX151GD126HS	SEMIKRON	POWER IGBT TRANSISTOR		0

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