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| SI3588DV New Product Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 rDS(on) (W) 0.080 @ VGS = 4.5 V 0.100 @ VGS = 2.5 V 0.128 @ VGS = 1.8 V 0.145 @ VGS = -4.5 V ID (A) 3.0 2.6 2.3 -2.2 -1.8 -1.5 P-Channel -20 0.200 @ VGS = -2.5 V 0.300 @ VGS = -1.8 V D1 S2 TSOP-6 Top View G1 1 6 D1 G2 3 mm S2 2 5 S1 G1 G2 3 4 D2 2.85 mm S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 1.05 1.15 0.73 0.75 0.83 0.53 -55 to 150 P-Channel 5 secs Steady State -20 "8 V -2.2 -1.8 "8 -1.05 1.15 0.73 -0.75 0.083 0.53 W _C -0.57 -1.5 A Symbol VDS VGS 5 secs Steady State 20 Unit 3.0 2.3 2.5 2.0 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71332 S-02383--Rev. A, 23-Oct-00 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 93 130 90 Maximum 110 150 90 Unit _C/W C/W 1 SI3588DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = -16 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta VDS w 5 V, VGS = 4.5 V ID(on) VDS p -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 3 A VGS = -4.5 V, ID = -2.2 A Drain-Source On-State Resistancea VGS = 2.5 V, ID = 2.6 A rDS(on) VGS = -2.5 V, ID = -1.8 A VGS = 1.8 V, ID = 2.3 A VGS = -1.8 V, ID = -1.0 A Forward Transconductancea VDS = 5 V, ID = 3 A gfs VDS = -5 V, ID = -2.2 A IS = 1.05 A, VGS = 0 V VSD IS = -1.05 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 5 -5 0.064 0.115 0.080 0.163 0.104 0.240 9 5 0.8 -0.8 1.1 -1.1 V S 0.080 0.145 0.100 0.200 0.128 0.300 W A 0.45 V -0.45 "100 "100 1 -1 10 -10 mA m nA Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 3 A Gate-Source Charge Qgs P-Channel VDS = -10 V, VGS = -4.5 V, ID = -2.2 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N-Channel VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = -4 V, RL = 8 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse Recovery Time tf IF = 1.05 A, di/dt = 100 A/ms trr IF = -1.05 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 5 5 0.65 nC 1.0 0.9 0.9 12 12 30 29 28 24 12 30 20 20 20 20 50 50 50 45 20 50 40 40 ns 7.5 7.5 Gate-Drain Charge Qgd Rise Time tr Turn-Off Delay Time td(off) Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71332 S-02383--Rev. A, 23-Oct-00 SI3588DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 10 TC = -55_C VGS = 4.5 thru 2 V 6 I D - Drain Current (A) I D - Drain Current (A) 6 125_C 4 8 25_C Vishay Siliconix N-CHANNEL Transfer Characteristics 4 1.5 V 2 2 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.5 600 Capacitance r DS(on)- On-Resistance ( W ) 0.4 C - Capacitance (pF) 500 400 Ciss 0.3 300 0.2 VGS = 1.8 V VGS = 2.5 V 0.1 VGS = 4.5 V 0.0 0 2 4 6 8 10 200 Coss Crss 0 4 8 12 16 20 100 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 1.8 1.6 r DS(on)- On-Resistance ( W ) (Normalized) 1.4 1.2 1.0 0.8 0.6 0.4 -50 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) 4 VDS = 10 V ID = 3.0 A VGS = 4.5 V ID = 3.0 A 3 2 1 0 0 1 2 3 4 5 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71332 S-02383--Rev. A, 23-Oct-00 www.vishay.com 3 SI3588DV Vishay Siliconix New Product N-CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.30 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.25 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.20 ID = 3.0 A TJ = 150_C 1 TJ = 25_C 0.15 0.10 0.05 0.1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 ID = 250 mA 6 V GS(th) Variance (V) -0.0 Power (W) 8 Single Pulse Power (Junction-to-Ambient) 0.1 -0.1 4 -0.2 2 -0.3 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71332 S-02383--Rev. A, 23-Oct-00 SI3588DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix N-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 10 TC = -55_C 8 I D - Drain Current (A) 25_C 6 P-CHANNEL Transfer Characteristics VGS = 4.5 thru 2.5 V 6 I D - Drain Current (A) 4 2V 125_C 4 2 1.5 V 2 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.75 600 Capacitance r DS(on)- On-Resistance ( W ) 0.60 C - Capacitance (pF) 500 Ciss 400 0.45 VGS = 1.8 V 0.30 VGS = 2.5 V 0.15 VGS = 4.5 V 300 200 Coss 100 Crss 0.00 0 2 4 ID - Drain Current (A) Document Number: 71332 S-02383--Rev. A, 23-Oct-00 6 8 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) www.vishay.com 5 SI3588DV Vishay Siliconix New Product P-CHANNEL 1.8 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 5 VDS = 10 V ID = 2.2 A r DS(on)- On-Resistance ( W ) (Normalized) 4 Gate Charge On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.2 A V GS - Gate-to-Source Voltage (V) 1.6 1.4 3 1.2 2 1.0 1 0.8 0 0 1 2 3 4 5 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.5 On-Resistance vs. Gate-to-Source Voltage r DS(on)- On-Resistance ( W ) 0.4 I S - Source Current (A) TJ = 150_C 1 0.3 ID = 2.2 A 0.2 TJ = 25_C 0.1 0.1 0.00 0.3 0.6 0.9 1.2 1.5 0.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 8 Single Pulse Power (Junction-to-Ambient) 0.3 6 V GS(th) Variance (V) 0.2 ID = 250 mA 0.1 Power (W) 4 0.0 2 -0.1 -0.2 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) www.vishay.com 6 Document Number: 71332 S-02383--Rev. A, 23-Oct-00 SI3588DV New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Vishay Siliconix P-CHANNEL 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71332 S-02383--Rev. A, 23-Oct-00 www.vishay.com 7 |
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