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| Datasheet File OCR Text: |
| Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 A (Max.) @ VDS = -100V n Low RDS(ON) : 0.161 (Typ.) 1 SFW/I9540 BVDSS = -100 V RDS(on) = 0.2 ID = -17 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -100 -17 -12 1 O Units V A A V mJ A mJ V/ns W W W/ C o -68 30 578 -17 13.2 -6.5 3.8 132 0.88 - 55 to +175 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds o TJ , TSTG TL o C 300 Thermal Resistance Symbol RJC RJA RJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 1.14 40 62.5 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. C SFW/I9540 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( "Miller" ) Charge Min. Typ. Max. Units -100 --2.0 ------------------0.11 ------9.5 240 83 14 22 45 26 43 7.4 17.8 ---4.0 -100 100 -10 -100 0.2 -360 125 40 55 100 60 54 --nC ns A S pF V o P-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=-250A See Fig 7 VDS=-5V,ID=-250A VGS=-20V VGS=20V VDS=-100V VDS=-80V,TC=150 C VGS=-10V,ID=-8.5A VDS=-40V,ID=-8.5A 4 O 4 O o V/ C ID=-250A V nA 1180 1535 VGS=0V,VDS=-25V,f =1MHz See Fig 5 VDD=-50V,ID=-17A, RG=12 See Fig 13 VDS=-80V,VGS=-10V, ID=-17A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 1 O 4 O Min. Typ. Max. Units --------135 0.7 -17 -68 -4.0 --A V ns C Test Condition Integral reverse pn-diode in the MOSFET TJ=25 C,IS=-17A,VGS=0V TJ=25 C,IF=-17A diF/dt=100A/s 4 O o o Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 L=3.0mH, I =-17A, V =-25V, R =27*, Starting T =25oC O AS DD G J 3 _ _ _ O ISD <-17A, di/dt <450A/s, VDD Fig 1. Output Characteristics VGS Top : -1 V 5 -1 V 0 - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V SFW/I9540 Fig 2. Transfer Characteristics -ID , Drain Current [A] -ID , Drain Current [A] 11 0 11 0 1 5 oC 7 10 0 2 oC 5 @Nts: oe 1 V =0V . GS 2 V =-0V . DS 4 3 2 0 s P l e T s .5 us et 6 8 1 0 10 0 @Nts: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC .C 5 1 -1 0 10 0 11 0 - 5 oC 5 1 -1 0 2 4 -VDS , Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current 06 . Fig 4. Source-Drain Diode Forward Voltage -IDR , Reverse Drain Current [A] RDS(on) , [ ] Drain-Source On-Resistance 05 . 04 . V =-0V 1 GS 03 . 11 0 02 . 10 0 1 5 oC 7 2 oC 5 1 -1 0 @Nts: oe 1 V =0V . GS us et 2 2 0 s P l e T s .5 15 . 20 . 25 . 30 . 35 . 40 . 45 . 01 . V =-0V 2 GS 00 . 0 8 1 6 2 4 3 2 4 0 @ N t : T = 2 oC oe J 5 4 8 5 6 6 4 05 . 10 . -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage 20 00 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd Fig 6. Gate Charge vs. Gate-Source Voltage 1 0 10 50 10 00 C oss @Nts: oe 1 V =0V . GS 2 f=1Mz . H -VGS , Gate-Source Voltage [V] C iss Capacitance [pF] V =-0V 2 DS V =-0V 5 DS V =-0V 8 DS 5 50 0 C rss @Nts:I =1 A oe D -7 0 0 1 0 2 0 3 0 4 0 5 0 00 1 0 11 0 -VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC] SFW/I9540 Fig 7. Breakdown Voltage vs. Temperature 12 . 25 . P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature -BVDSS , (Normalized) Drain-Source Breakdown Voltage RDS(on) , (Normalized) Drain-Source On-Resistance 20 . 11 . 15 . 10 . 10 . @Nts: oe 1 V =-0V . GS 1 2 I =-. A . D 85 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 20 0 09 . @Nts: oe 1 V =0V . GS 2 I = - 5 A . D 20 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 o 05 . 08 . -5 7 10 5 15 7 20 0 00 . -5 7 TJ , Junction Temperature [ C] TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area -ID , Drain Current [A] Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y 1 0 2 Fig 10. Max. Drain Current vs. Case Temperature 2 0 -ID , Drain Current [A] 12 0 1 6 01m .s 1m s 11 0 D C @Nts: oe 1 T = 2 oC .C 5 2 T = 1 5 oC .J 7 3 Snl Ple . ige us 1m 0s 1 2 8 10 0 4 1 -1 0 0 1 0 11 0 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7 -VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC] Fig 11. Thermal Response Thermal Response 100 D=0.5 @ Notes : 1. Z J C (t)=1.14 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t) P. DM t1. t2. 0.2 10- 1 0.1 0.05 Z (t) , 0.02 0.01 single pulse 10- 2 - 5 10 JC 10- 4 10- 3 10- 2 10- 1 100 101 t 1 , Square Wave Pulse Duration [sec] P-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform SFW/I9540 " Current Regulator " 50K 12V 200nF 300nF Same Type as DUT VGS Qg -10V VDS VGS DUT -3mA Qgs Qgd R1 Current Sampling (IG) Resistor R2 Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vin RG DUT -10V Vout 90% t on t off tr td(off) tf VDD ( 0.5 rated VDS ) td(on) Vin 10% Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms LL VDS Vary tp to obtain required peak ID BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD tp ID VDD Time VDS (t) RG DUT -10V tp C VDD IAS BVDSS ID (t) SFW/I9540 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms P-CHANNEL POWER MOSFET + VDS DUT -IS L Driver RG VGS Compliment of DUT (N-Channel) VGS VDD * dv/dt controlled by "RG" * IS controlled by Duty Factor "D" VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IS ( DUT ) IRM di/dt IFM , Body Diode Forward Current Vf VDS ( DUT ) Body Diode Forward Voltage Drop Body Diode Recovery dv/dt VDD |
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