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| 4AK17 Silicon N-Channel Power MOS FET Array Application High speed power switching Features * Low on-resistance R DS(on) 0.045 , VGS = 10 V, I D = 10 A R DS(on) 0.065 , VGS = 4 V, I D = 10 A * Capable of 4 V gate drive * Low drive current * High speed switching * High density mounting * Suitable for motor driver, solenoid driver and lamp driver * Discrete packaged devices of same die: 2SK972, 2SK1095 4AK17 Outline Absolute Maximum Ratings (Ta = 25C) (1 Unit) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. 4 devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25C)* Pch* Tch Tstg 2 2 1 Rating 60 20 10 40 10 28 4 150 -55 to +150 Unit V V A A A W W C C 2 4AK17 Electrical Characteristics (Ta = 25C) (1 Unit) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.033 0.04 17 1400 720 220 15 95 300 170 1.05 110 Max -- -- 10 250 2.0 0.045 0.065 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 10 A, VGS = 0 I F = 10 A, VGS = 0 dIF/dt = 50 A/s Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 10 A VGS = 10 V*1 I D = 10 A VGS = 4 V*1 I D = 10 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 10 A VGS = 10 V RL = 3 Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 3 4AK17 4 4AK17 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5 |
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